Combined scheme of UV/ozone and HMDS treatment on a gate insulator for performance improvement of a low-temperature-processed bottom-contact OTFT

Fan, Chih‐Peng; Lin, Yung‐Chih; Huang, Cheng‐Han

doi:10.1088/0268-1242/26/4/045006

Cited by 14 publications

(13 citation statements)

References 21 publications

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“…OH‐groups act as electron traps, which have a great influence on the switching on behaviour of an OTFT, shifting V on in the positive direction. The surface area density of OH‐groups on a SiO 2 ‐dielectric is difficult to control, highly sensitive to various surface treatments , and thus also strongly depends on the humidity during sample preparation, the timespan between preparation steps, etc. Starting from the individual V on for each device, the evolution of V on with coverage is, however, very similar for all devices with SiO 2 as gate dielectric, corresponding to a voltage shift of D V on,sat ∼ 15–20 V. A similar shift with similar saturation value D V th,sat ∼ 20 V is observed for the threshold voltage in devices with pure SiO 2 dielectric (compare V on SiO 2 and V th SiO 2 in Fig.…”

Section: Resultsmentioning

confidence: 99%

Electrical in‐situ characterisation of interface stabilised organic thin‐film transistors

Striedinger

Fian

Petritz

et al. 2015

Physica Rapid Research Ltrs

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We report on the electrical in-situ characterisation of organic thin film transistors under high vacuum conditions. Model devices in a bottom-gate/bottom-contact (coplanar) configuration are electrically characterised in-situ, monolayer by monolayer (ML), while the organic semiconductor (OSC) is evaporated by organic molecular beam epitaxy (OMBE). Thermal SiO2 with an optional polymer interface stabilisation layer serves as the gate dielectric and pentacene is chosen as the organic semiconductor. The evolution of transistor parameters is studied on a bi-layer dielectric of a 150 nm of SiO2 and 20 nm of poly((±)endo,exo-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) and compared to the behaviour on a pure SiO2 dielectric. The thin layer of PNDPE, which is an intrinsically photo-patternable organic dielectric, shows an excellent stabilisation performance, significantly reducing the calculated interface trap density at the OSC/dielectric interface up to two orders of magnitude, and thus remarkably improving the transistor performance.

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Section: Resultsmentioning

confidence: 99%

Electrical in‐situ characterisation of interface stabilised organic thin‐film transistors

Striedinger

Fian

Petritz

et al. 2015

Physica Rapid Research Ltrs

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“…Previous studies have shown that UV ozone removes the contaminants from the SiO 2 surface, leaving unstable dangling bonds that become terminated with hydroxyl (-OH) groups, making the SiO 2 surface more hydrophilic and thus susceptible to adsorption of contaminants. [15][16][17] This mechanism also explains the increased effectiveness of the cleaning procedure that includes both the UV ozone treatment and the HCl bath. By following the UV ozone treatment with an HCl bath, Cl ions replace the hydroxyl groups, leaving the surface hydrophobic.…”

Section: Discussionmentioning

confidence: 99%

Optimization of surface pretreatment for single GaN nanowire devices

Herrero

Bertness

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The correlation of residual contamination with void formation at the contact/SiO 2 interface for single GaN nanowire (NW) devices was investigated. The morphology of the metal/SiO 2 interface was studied by removing annealed Ni/Au films from the SiO 2 surface with carbon tape, mounting the films for scanning electron microscopy and imaging. Formation of voids at the metal/SiO 2 interface, which can negatively affect device performance, was shown to occur during annealing of Ni/Au contacts to NWs on SiO 2. It was discovered that residual contamination, both from the NW solution and from photolithographic processes on the NW-SiO 2 surface prior to metal deposition, can cause significant increases in the number of voids observed at the metal/SiO 2 interface. Various predeposition cleaning methods were investigated in order to minimize the amount of void formation associated with residual contamination. The degree of void formation at the metal/SiO 2 interface is used to evaluate the effectiveness of each cleaning method. It was determined that the most effective cleaning method for removing residual contamination from the NW-SiO 2 surface was an ultraviolet ozone treatment followed by a dilute HCl bath, immediately preceding contact deposition. [

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“…The result of this process is the growth of the SiOx on the surface of QDs as shown in Figure 1a. HMDS is widely used in cleaning processes that oxidize around impurities on the semiconductor wafer surface with chemical stability and then remove them through etch [22,23]. With this in mind, it is intended to improve the properties by oxidation on the surface of QDs.…”

Section: Introduction Of Hmds For Qd Improvementmentioning

confidence: 99%

Improvement of Quantum Dot Light Emitting Device Characteristics by CdSe/ZnS Blended with HMDS (Hexamethyldisilazane)

et al. 2020

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We demonstrated the way to improve the characteristics of quantum dot light emitting diodes (QD-LEDs) by adding a simple step to the conventional fabrication process. For instance, we can effectively deactivate the surface defects of quantum dot (QD) (e.g., CdSe/ZnS core-shell QDs in the current work) with the SiO bonds by simply mixing QDs with hexamethyldisilazane (HMDS) under atmospheric conditions. We observed the substantial improvement of device characteristics such that the current efficiency, the maximum luminance, and the QD lifetime were improved by 1.7–1.8 times, 15–18%, and nine times, respectively, by employing this process. Based on the experimental data (e.g., energy dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS)), we estimated that the growth of the SiOx on the surface of QDs is self-limited: the SiOx are effective to passivate the surface defects of QDs without deteriorating the intrinsic properties including the color-purity of QDs. Second, we proposed that the emission profiling study can lead us to the fundamental understanding of charge flow in each layer of QD-LEDs. Interestingly enough, many problems related to the charge-imbalance phenomenon were simply solved by selecting the combination of thicknesses of the hole transport layer (HTL) and the electron transport layer (ETL).

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Combined scheme of UV/ozone and HMDS treatment on a gate insulator for performance improvement of a low-temperature-processed bottom-contact OTFT

Cited by 14 publications

References 21 publications

Electrical in‐situ characterisation of interface stabilised organic thin‐film transistors

Electrical in‐situ characterisation of interface stabilised organic thin‐film transistors

Optimization of surface pretreatment for single GaN nanowire devices

Improvement of Quantum Dot Light Emitting Device Characteristics by CdSe/ZnS Blended with HMDS (Hexamethyldisilazane)

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