Based on the powerful concept of embedded dipole self‐assembled monolayers (SAMs), highly conductive interfacial layers are designed, which allow tuning the contact resistance of organic thin‐film transistors over three orders of magnitude with minimum values well below 1 kΩ cm. This not only permits the realization of highly competitive p‐type (pentacene‐based) devices on rigid as well as flexible substrates, but also enables the realization of n‐type (C60‐based) transistors with comparable characteristics utilizing the same electrode material (Au). As prototypical examples for the high potential of the presented SAMs in more complex device structures, flexible organic inverters with static gains of 220 V/V and a 5‐stage ring‐oscillator operated below 4 V with a stage frequency in the range of the theoretically achievable maximum are fabricated. Employing a variety of complementary experimental and modeling techniques, it is shown that contact resistances are reduced by i) eliminating the injection barrier through a suitable dipole orientation, and by ii) boosting the transmission of charge carriers through a deliberate reduction of the SAM thickness. Notably, the embedding of the dipolar group into the backbones of the SAM‐forming molecules allows exploiting their beneficial effects without modifying the growth of the active layer.

Thin high-κ oxide films on InAs, formed by atomic layer deposition, are the key to achieve high-speed metal-oxide-semiconductor devices. We have studied the native oxide and the interface between InAs and 2 nm thick Al2O3 or HfO2 layers using synchrotron x-ray photoemission spectroscopy. Both films lead to a strong oxide reduction, obtaining less than 10% of the native As-oxides and between 10% and 50% of the native In-oxides, depending on the deposition temperature. The ratio of native In- to As-oxides is determined to be 2:1. The exact composition and the influence of different oxidation states and suboxides is discussed in detail.

(>80%), [ 25,35,37,38 ] only few of those can combine low-voltage operation with high gain and suffi cient immunity against electrical noise. [ 39 ] Moreover, there have been few investigations of the infl uence of hysteresis and threshold voltage shifts on the inverter characteristics, which typically gives rise to electrical instabilities and performance limitations of those devices. [ 32,39 ] The inverter's noise margin is the most critical parameter, since it directly determines the maximum complexity of circuits. [ 22 ] Particularly, interesting applications of organic electronic circuits are found in analog electronics that allow for the read-out and processing of signals from printed large-area sensors and form an interface to silicon electronics. Examples are analog-to-digital (A/D) converters, operational amplifi ers, and comparators, all including several tens of transistors, thus requiring both high gain and a large noise margin to be functional as well as suffi cient processability.It is interesting to note that the majority of organic complementary inverters already mentioned [24][25][26][27][28][29][30][31][32][33][34][36][37][38][39][40] relied on pentacene as the p-type semiconductor (14 incidences), fl uorinated copper phthalocyanine (6 incidences), or N , N ′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (5 incidences) as the n-type material. On the contrary, the variation in gate dielectric materials that are used is much higher with an emphasis on hybrid dielectric systems. Hybrid systems allow accounting for both a high dielectric breakdown voltage and an engineered interface to the semiconductor. Moreover, the implementation of biodegradable and biocompatible materials represents a new niche in the organic electronics research, aimed to address the issues of cost and toxicity to humans and environment posed by nowadays electronics, a topic that was recently reviewed elsewhere. [41][42][43] Accordingly, we have demonstrated the usage of a novel hybrid and biodegradable highk gate dielectric material system based on a cellulose derivative for low-voltage complementary organic circuits with exceptional high noise margins. [ 35 ] Previous work done in our laboratories demonstrated the fabrication feasibility of complex circuits, where the electrode patterning was performed by a self-aligned photolithography technique. [ 44,45 ] This process can easily be transferred to an anodized aluminum (Al 2 O 3 ) + trimethylsilyl cellulose (TMSC) based bilayer system; the respective results will be published soon.To follow on this preliminary work we have developed an extraordinarily well-performing complementary inverter technology based on a hybrid dielectric composed of a bilayer of alumina (Al 2 O 3 ) and trimethylsilyl cellulose (TMSC) and pentacene or C 60 for the p-channel and the n-channel organic semiconductor, respectively. It outperforms any inverter reported so far with respect to the combination of excellent key parameters, such as record DC gain of above 500 V/V, low operation voltage o...

The fabrication of organic thin film transistors with highly reproducible characteristics presents a very challenging task. We have prepared and analyzed model pentacene thin film transistors under ultra-high vacuum conditions, employing surface analytical tools and methods. Intentionally contaminating the gold contacts and SiO2 channel area with carbon through repeated adsorption, dissociation, and desorption of pentacene proved to be very advantageous in the creation of devices with stable and reproducible parameters. We mainly focused on the device properties, such as mobility and threshold voltage, as a function of film morphology and preparation temperature. At 300 K, pentacene displays Stranski-Krastanov growth, whereas at 200 K fine-grained, layer-like film growth takes place, which predominantly influences the threshold voltage. Temperature dependent mobility measurements demonstrate good agreement with the established multiple trapping and release model, which in turn indicates a predominant concentration of shallow traps in the crystal grains and at the oxide-semiconductor interface. Mobility and threshold voltage measurements as a function of coverage reveal that up to four full monolayers contribute to the overall charge transport. A significant influence on the effective mobility also stems from the access resistance at the gold contact-semiconductor interface, which is again strongly influenced by the temperature dependent, characteristic film growth mode.

In many areas of science and technology, patterned films and surfaces play a key role in engineering and development of advanced materials. Here, we present a versatile toolbox that provides an easy patterning method for cellulose thin films by means of photolithography and enzymatic digestion. A patterned UV-illumination of trimethylsilyl cellulose thin films containing small amounts of a photo acid generator leads to a desilylation reaction and thus to the formation of cellulose in the irradiated areas. Depending on the conditions of development, either negative and positive type cellulose structures can be obtained, offering lateral resolutions down to the single-digit micro meter range by means of contact photolithography. In order to highlight the potential of this material for advanced patterning techniques, cellulose structures with sub-µm resolution are fabricated by means of two-photon absorption lithography. Moreover, these photochemically structured cellulose thin films are successfully implemented as dielectric layers in prototype organic thin film transistors. Such photopatternable dielectric layers are crucial for the realization of electrical interconnects for demanding organic device architectures.Electronic supplementary materialThe online version of this article (doi:10.1007/s10570-014-0471-4) contains supplementary material, which is available to authorized users.