Combined SPICE-FEM analysis of electrothermal effects in InGaP/GaAs HBT devices and arrays for handset applications

d’Alessandro, V.; Catalano, Antonio Pio; Codecasa, Lorenzo; Moser, B.; Zampardi, P.J.

doi:10.1109/eurosime.2018.8369866

Cited by 8 publications

(12 citation statements)

References 32 publications

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“…In our earlier contribution [15], we exploited the aforementioned approach to analyze the dc ET behavior of test devices meant for experimental characterization and arrays for output stages of PAs in InGaP/GaAs HBT technology. In that case, a simple ETN based on the N×N thermal resistance (R TH ) matrix, N being the number of individual HBTs (each associated to one heat source), was adopted in the macrocircuits.…”

Section: Introductionmentioning

confidence: 99%

“…Differently from [15], where the arrays were assumed to lie on an unthinned GaAs substrate (as typical for known-good-die identification), here they are considered in a realistic phone-board environment, i.e., the substrate is thinned and attached on a laminate, the bottom of which is at T B = 358 K.…”

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confidence: 99%

“…Similar to [21], in this work the linear power-temperature feedback is described by invoking FANTASTIC [22,23], which is fed with the COMSOL geometry/mesh accompanied with additional information (on position/shape of heat sources, boundary conditions, and thermal conductivities), and rapidly extracts an ETN based on the R TH matrix without performing simulations. Contrary to conventional ETNs (like the one used in [15]), the FANTASTIC network allows reconstructing the overall temperature field for selected bias conditions in a post-processing step.…”

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confidence: 99%

“…In [15], the Kirchhoff's transformation was applied by assuming that all materials share the same nonlinear thermal behavior as GaAs. Unfortunately, this was found to lead to a perceptible overestimation of ET effects.…”

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confidence: 99%

“…By virtue of the above points, this work can be reviewed as an improved, and selfconsistent, version of [15].…”

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confidence: 99%

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Analysis of Electrothermal Effects in Devices and Arrays in InGaP/GaAs HBT Technology

et al. 2021

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In this paper, the dc electrothermal behavior of InGaP/GaAs HBT test devices and arrays for power amplifier output stages is extensively analyzed through an efficient simulation approach. The approach relies on a full circuit representation of the domains, which accounts for electrothermal effects through the thermal equivalent of the Ohm’s law and can be solved in any commercial circuit simulator. In particular, the power-temperature feedback is described through an equivalent thermal network automatically obtained by (i) generating a realistic 3-D geometry/mesh of the domain in the environment of a numerical tool with the aid of an in-house routine; (ii) feeding the geometry/mesh to FANTASTIC, which extracts the network without performing simulations. Nonlinear thermal effects adversely affecting the behavior of devices/arrays at high temperatures are included through a calibrated Kirchhoff’s transformation. For the test devices, the thermally-induced distortion in I–V curves is explained, and the limits of the safe operating regions are identified for a wide range of bias conditions. A deep insight into the electrothermal behavior of the arrays is then provided, with particular emphasis on the detrimental nonuniform operation. Useful guidelines are offered to designers in terms of layout and choice of the ballasting strategy.

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Section: Introductionmentioning

confidence: 99%

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confidence: 99%

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confidence: 99%

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confidence: 99%

“…By virtue of the above points, this work can be reviewed as an improved, and selfconsistent, version of [15].…”

mentioning

confidence: 99%