Combined STM and Four-Probe Resistivity Measurements on Single Semiconductor Nanowires

Berthe, Maxime; Durand, Corentin; Xu, Tao; Nys, J.P.; Caroff, Philippe; Grandidier, B.

doi:10.1007/978-3-642-28172-3_8

Cited by 4 publications

(4 citation statements)

References 21 publications

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“…Multiple-Probe Conductivity Measurement: The test was performed on the system called nanoprobe (Omicron Nanotechnology GmbH) which was installed at IEMN [66] (CNRS, France) where the attention was given to precisely control the STM tips that were bought in contact with the different FIB-lamellar layers. The whole system was operated in ultrahigh vacuum (UHV) and it can be described in three important parts: i) an SEM (UHV-Carl Zeiss Gemini) with a resolution in the order of 5 nm and images acquired from the top of the sample and probes; ii) a multiple-probe STM with four independent STM scanners for imaging, contact, and manipulation of nanostructures under SEM monitoring.…”

Section: Morphological Analysis and Structural Characterization Of Th...mentioning

confidence: 99%

In Situ Liquid Electrochemical TEM Investigation of LiMn_1.5Ni_0.5O₄ Thin Film Cathode for Micro‐Battery Applications

et al. 2021

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Micro‐batteries are attractive miniaturized energy devices for new Internet of Things applications, but the lack of understanding of their degradation process during cycling hinders improving their performance. Here focused ion beam (FIB)‐lamella from LiMn1.5Ni0.5O4 (LMNO) thin‐film cathode is in situ cycled in a liquid electrolyte inside an electrochemical transmission electron microscope (TEM) holder to analyze structural and morphology changes upon (de)lithiation processes. A high‐quality electrical connection between the platinum (Pt) current collector of FIB‐lamella and the microchip's Pt working electrode is established, as confirmed by local two‐probe conductivity measurements. In situ cyclic voltammetry (CV) experiments show two redox activities at 4.41 and 4.58/4.54 V corresponding to the Ni2+/3+ and Ni3+/4+ couples, respectively. (S)TEM investigations of the cycled thin‐film reveal formation of voids and cracks, loss of contact with current collector, and presence of organic decomposition products. The 4D STEM ASTAR technique highlights the emergence of an amorphization process and a decrease in average grain size from 20 to 10 nm in the in situ cycled electrode. The present findings, obtained for the first time through the liquid electrochemical TEM study, provide several insights explaining the capacity fade of the LMNO thin‐film cathode typically observed upon cycling in a conventional liquid electrolyte.

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Section: Morphological Analysis and Structural Characterization Of Th...mentioning

confidence: 99%

In Situ Liquid Electrochemical TEM Investigation of LiMn_1.5Ni_0.5O₄ Thin Film Cathode for Micro‐Battery Applications

et al. 2021

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“…The electrical measurements were performed on HF etched samples, in an ultrahigh vacuum (UHV) system (base pressure lower than 5 × 10 –10 mbar), equipped with a multiple probe scanning tunneling microscope combined with a scanning electron microscope (SEM) (Nanoprobe, Omicron Nanotechnology) . W tips were prepared by an electrochemical etching in NaOH and thoroughly cleaned in UHV.…”

Section: Methodsmentioning

confidence: 99%

Functionalization of Silica Nanoparticles and Native Silicon Oxide with Tailored Boron-Molecular Precursors for Efficient and Predictive p-Doping of Silicon

et al. 2015

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Designing new approaches to incorporate dopant impurities in semiconductor materials is essential in keeping pace with electronics miniaturization without device performance degradation. On the basis of a mild solution-phase synthetic approach to functionalize silica nanoparticles, we were able to graft tailor-made boronmolecular precursors and control the thermal release of boron in the silica framework. The molecular-level description of the surface structure lays the foundation for a structure−property relationship approach, which is readily and successfully implemented to dope non-deglazed silicon wafers. As the method does not require an additional oxide capping step and shows minimal risk of carbon contamination, as demonstrated by compositional and electrical characterizations of the wafers, it is perfectly adapted to advanced microelectronics manufacturing processes. ■ INTRODUCTIONDopants play a critical role in semiconductor devices and are therefore a major focus of research. 1−3 For instance, several doping strategies have emerged and led to significant improvements to drive impurities (dopant) inside pure substrates and to reduce the variability of targeted electronic devices, together with increased performances for nanoobjects. 4−11 However, improving dopant incorporation, avoiding randomness of concentration, and investigating diffusion phenomena still represent an outstanding challenge today, in particular with the development of smaller nanosized devices. 8 Indeed, increasing the performance in microelectronics has been directly related to the continuing shrinking of transistors 12 and thus to their optimized properties. The control of dopant concentration and distribution in semiconductors is essential, 8 and several methods such as single-ion implantation, 6 chemisorption of dopant from gaseous hydride molecules, 9,10 spin-on doping, 11 or single-atom doping 13 have been investigated. The monolayer doping (MLD) concept 14 appeared to be well-adapted to the medium doping range targeted for transistors or junctions in Fins as well as in nanowire structures. 15,16 However, transferring this process to the microelectronic industry is difficult because it requires a rather nonmanufacturing-friendly substrate (hydrofluoric acid deglazed silicon) and the use of a low-temperature, conformal SiO 2 evaporation capping to avoid dopant evaporation upon annealing. To circumvent this capping issue, the monolayer contact doping (MLCD) concept was recently proposed. 17,18 While providing good results in the formation of (ultra)shallow junctions, the use of two substrates (donor and acceptor) makes this ex situ technique not as straightforward as approaches related to MLD, relying on only one substrate.In this work, we show how to avoid these issues by the use of a simple bottom-up methodology based on the grafting of tailored boron-containing molecular precursors (anchoring/ self-protected) on the thin layer of native silica present on top of silicon wafers. This method takes advantage of (i) the presence of a...

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“…Our approach constitutes a method where electrical, photovoltaic and strain-induced properties of individual as-grown semiconductor nanowires for solar cells can be studied simultaneously, with in situ high resolution imaging of the structures. The combination of STM and electron microscopy for making electrical measurements on nanostructures was introduced already around 15 years ago [25], [26] and the technique has been widely used since to investigate, for example, the resistivity of semiconductor nanowires [27], [28], and how the electrical transport properties depend on the diameter [29], mechanical stress [30], [31] and doping profile [30], [32]. Since we are focusing on nanowires for solar cells we are interested in the optical properties and light-induced effects.…”

Section: Introductionmentioning

confidence: 99%

“…We have therefore introduced a light emitting diode in the SEM for illumination of the nanowires. We have also established a procedure to control and optimize the electrical contact between the moveable STM probe and the nanowire, which is a common challenge for characterizing the electrical properties of semiconductor nanostructures with a nanoprobe that needs to be addressed [27], [28], [31], [33]. The electron beam, with a diameter of a few nanometers, provided by the SEM is also utilized to study the characteristics of the built-in p-i-n junction in the individual nanowires by so called electron beam induced current (EBIC) measurements.…”

Section: Introductionmentioning

confidence: 99%

An STM – SEM setup for characterizing photon and electron induced effects in single photovoltaic nanowires

et al. 2018

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Vertical arrays of semiconductor nanowires show great potential for material-efficient and high-performance solar cells. The characterization and correlation between material structure and properties of the individual nanowires are crucial for the continued performance improvement of such devices. In this work, we use a scanning tunneling microscope (STM) probe inside a scanning electron microscope (SEM) to study single photovoltaic nanowires. The STM probe is used to contact individual nanowires in ensembles. We combine the STM-SEM with an in situ light emitting diode (LED) illumination source to study both the electrical and photovoltaic properties of vertical GaAs nanowires with radial p-in junctions. We also study the local charge separation ability within the nanowires by electron beam induced current (EBIC) measurements. The in situ SEM setup allows the correlation between properties and nanowire structure. The data show that the quality of the electrical contact to the semiconductor nanowire is crucial to be able to investigate the inherent properties of the nanowires. We have established a procedure to make high-quality Ohmic contacts to the nanowires with the STM probe. We also show that the effect of mechanical strain on the electrical properties can be investigated by this technique.

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Combined STM and Four-Probe Resistivity Measurements on Single Semiconductor Nanowires

Cited by 4 publications

References 21 publications

In Situ Liquid Electrochemical TEM Investigation of LiMn_1.5Ni_0.5O₄ Thin Film Cathode for Micro‐Battery Applications

In Situ Liquid Electrochemical TEM Investigation of LiMn_1.5Ni_0.5O₄ Thin Film Cathode for Micro‐Battery Applications

Functionalization of Silica Nanoparticles and Native Silicon Oxide with Tailored Boron-Molecular Precursors for Efficient and Predictive p-Doping of Silicon

An STM – SEM setup for characterizing photon and electron induced effects in single photovoltaic nanowires

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Combined STM and Four-Probe Resistivity Measurements on Single Semiconductor Nanowires

Cited by 4 publications

References 21 publications

In Situ Liquid Electrochemical TEM Investigation of LiMn1.5Ni0.5O4 Thin Film Cathode for Micro‐Battery Applications

In Situ Liquid Electrochemical TEM Investigation of LiMn1.5Ni0.5O4 Thin Film Cathode for Micro‐Battery Applications

Functionalization of Silica Nanoparticles and Native Silicon Oxide with Tailored Boron-Molecular Precursors for Efficient and Predictive p-Doping of Silicon

An STM – SEM setup for characterizing photon and electron induced effects in single photovoltaic nanowires

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In Situ Liquid Electrochemical TEM Investigation of LiMn_1.5Ni_0.5O₄ Thin Film Cathode for Micro‐Battery Applications

In Situ Liquid Electrochemical TEM Investigation of LiMn_1.5Ni_0.5O₄ Thin Film Cathode for Micro‐Battery Applications