“…[31] Herein, we expand this technique to the w|IL one, where the Galvani potential difference across the interface, − IL = ∆ IL , is controlled by electrodes immersed in either phase, allowing control and quantification of charge transfer across the LLI. Transmission electron microscopy (TEM) and stochastic impacts were used to provide NC sizing, while optical microscopies (back absorbing layer, BALM [42,43], and darkfield [28,[44][45][46]) provided in situ visualisation of the reactivity of such NCs in solution. The latter have emerged as powerful techniques for imaging objects in situ below the diffraction limit of classical bright-field optical microscopies (<500nm) and have been used effectively for NP sizing as well as for monitoring the transport, electrochemical transformation or growth of NPs at nano/microelectrodes or pipettes [28,42,[47][48][49][50][51].…”