Comment on “A quantitative numerical model of multilayer vapor-deposited organic light emitting diodes” [J. Appl. Phys. <b>86</b>, 3895 (1999)]

Song, Seung-Hun; Lee, Joo Hwa; Oh, Jaejoon

doi:10.1063/1.1569981

Cited by 2 publications

(1 citation statement)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The dielectric layer may consist of a bank layer (typically either SiO 2 or SiN x ). Though the OLED layers (TPD, Alq3) have a dielectric constant (" ¼ $ 3), 15) they have also conductivity, acting as the electrodes connected to the cathode.…”

Section: Storage Capacitor C St Designmentioning

confidence: 99%

High-Aperture Pixel Design Employing V_DD Line Elimination for Active Matrix Organic Light Emitting Diode Display

Nam

Lee

Kim

et al. 2006

jjap

View full text Add to dashboard Cite

High-aperture ratio pixel design employing polycrystalline silicon thin-film transistors (poly-Si TFTs) for active matrix organic light emitting diode (AMOLED) displays is proposed. The VDD supply line in each pixel is eliminated and the gate scan line is utilized as a VDD supply so that the pixel aperture ratio is increased considerably. The increased emission area achieves low current density through OLED, thus the troublesome OLED luminance degradation would be suppressed and the life-time of OLED materials may be increased. In order to implement the proposed pixel driving, a new fabrication process for the storage capacitor (CST) which uses indium–tin oxide (ITO) and the cathode layers is presented.

show abstract

Section: Storage Capacitor C St Designmentioning

confidence: 99%

High-Aperture Pixel Design Employing V_DD Line Elimination for Active Matrix Organic Light Emitting Diode Display

Nam

Lee

Kim

et al. 2006

jjap

View full text Add to dashboard Cite

show abstract

Insights into OLED functioning through coordinated experimental measurements and numerical model simulations

Berner¹,

Houili

Leo³

et al. 2004

Physica Status Solidi (a)

View full text Add to dashboard Cite

Applying this method to the standard OLED device structure that has received broad attention in the literature, we have found a number of surprising results. From our experiments, we have demonstrated that the average electric field inside the hole transport layer is larger than or equal to the average field in the emission layer over the entire current range. The device simulations fully clarify the situation, giving insight into the space charge effects as well as the hole and the electron current distributions in the device. In particular, we found that there is a leakage of unrecombined holes towards the cathode at low voltages. We also found a strong variation of the electric field in the Alq3 layer due to space charge effects. By using the laser dye derivatives DCM‐TPA with electron trapping capabilities and DCM‐II with both electron and hole trapping capabilities as dopants in a standard OLED architecture, we could study the effect on transport and emission characteristics. In the case of the exclusively electron trapping dopant, a blue‐shift of the emission color with increasing bias is observed which we find is due to a splitting of the recombination zone.Applying this method to the standard OLED device structure that has received broad attention in the literature, we have found a number of surprising results. From our experiments, we have demonstrated that the average electric field inside the hole transport layer is larger than or equal to the average field in the emission layer over the entire current range. The device simulations fully clarify the situation, giving insight into the space charge effects as well as the hole and the electron current distributions in the device. In particular, we found that there is a leakage of unrecombined holes towards the cathode at low voltages. We also found a strong variation of the electric field in the Alq3 layer due to space charge effects. By using the laser dye derivatives DCM‐TPA with electron trapping capabilities and DCM‐II with both electron and hole trapping capabilities as dopants in a standard OLED architecture, we could study the effect on transport and emission characteristics. In the case of the exclusively electron trapping dopant, a blue‐shift of the emission color with increasing bias is observed which we find is due to a splitting of the recombination zone.

show abstract

Comment on “A quantitative numerical model of multilayer vapor-deposited organic light emitting diodes” [J. Appl. Phys. 86, 3895 (1999)]

Cited by 2 publications

References 1 publication

High-Aperture Pixel Design Employing V_DD Line Elimination for Active Matrix Organic Light Emitting Diode Display

High-Aperture Pixel Design Employing V_DD Line Elimination for Active Matrix Organic Light Emitting Diode Display

Insights into OLED functioning through coordinated experimental measurements and numerical model simulations

Contact Info

Product

Resources

About

Comment on “A quantitative numerical model of multilayer vapor-deposited organic light emitting diodes” [J. Appl. Phys. 86, 3895 (1999)]

Cited by 2 publications

References 1 publication

High-Aperture Pixel Design Employing VDD Line Elimination for Active Matrix Organic Light Emitting Diode Display

High-Aperture Pixel Design Employing VDD Line Elimination for Active Matrix Organic Light Emitting Diode Display

Insights into OLED functioning through coordinated experimental measurements and numerical model simulations

Contact Info

Product

Resources

About

High-Aperture Pixel Design Employing V_DD Line Elimination for Active Matrix Organic Light Emitting Diode Display

High-Aperture Pixel Design Employing V_DD Line Elimination for Active Matrix Organic Light Emitting Diode Display