Comment on “In Situ Measurements of Stress-Potential Coupling in Lithiated Silicon” [J. Electrochem. Soc., 157, A1253 (2010)], “On Plastic Deformation and Fracture in Si Films during Electrochemical Lithiation/Delithiation Cycling” [J. Electrochem. Soc., 160, A1885 (2013)], and “Real-Time Stress Measurements in Germanium Thin Film Electrodes during Electrochemical Lithiation/Delithiation Cycling” [J. Electrochem. Soc., 162, A2840 (2015)]

In Situ Stress Evolution in Li1+xMn2O4Thin Films during Electrochemical Cycling in Li-Ion Cells

“…where, d 0 is the initial distance between the adjacent laser beams, A m is the mirror constant given as 2Ln s /cos(θ) [L is the optical path length of the laser beam between the plane of the wafer substrate and the CCD array, n s is the refractive index of the electrolyte solution with respect to air, 40 θ is the incident angle of the laser beam on the wafer substrate]. The mirror constant is measured by placing a flat mirror and a reference mirror of known curvature in the sample plane (submerged into the electrolyte) and measuring the relative change in the spot spacing.…”

(Invited) Interpretation of Certain Features of the Interface Stress vs. Electrode Potential Curves of Gold with the Help of Dual Dynamic Voltammetry

“…where Es, s ν and ts are Young's modulus, Poisson's ratio, and thickness of the plate, respectively, h is the distance between the lower end of the electrode holder and the reflection point of the laser beam; l1 is the distance between the optical window and the reflection point on the electrode, l2 is the distance between the optical window and the position sensitive (photo)detector (PSD) plane, w = l1 + l2 , and y is the change of the position of the light spot on the PSD (see Fig. 1), and ns,i is the refractive index of the solution (22,23). The values of Δ(1/Rc) = Δs / ki can be calculated, if the changes of the deflection angle of a laser beam mirrored by the plate are measured (3,5).…”