Comments About the Mechanism of Porous Layer Growth: Case of InP

Santinacci, Lionel; Gérard, I.; Bouttemy, Muriel; Marques, Marta; Etchéberry, Arnaud

doi:10.1149/1.2982581

Cited by 3 publications

(3 citation statements)

References 7 publications

(9 reference statements)

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“…Si, SiC, Ge, Ge/Si alloys, and various II-VI and III-V compounds (including InP) can be made porous in such a manner. [1][2][3][4][5][6][7][8][9][10][11][12][13] The different pores that are formed under different conditions can vary in orientation, frequency of branching, type of infilling and extent of the porous structure. For instance, porous layers form in GaP anodised in aqueous H 2 SO 4 solution by the growth of almost hemispherical domains of pores into continuous porous layers.…”

Section: Introductionmentioning

confidence: 99%

Model of Formation and Propagation of Nanoporous Structures in Indium Phosphide during Anodisation in Aqueous KOH

Keyes

Quill²,

Bourke³

et al. 2018

ECS Trans.

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Porous layers are formed in highly doped (10 18 cm -3 ) n-type InP anodised in concentrated aqueous KOH solutions. The pores have a characteristic diameter and propagate along <111>A directions. This preferential etching leads to porous regions with a characteristic tetrahedral shape. We have previously proposed a three-step mechanism of electrochemical pore formation: (1) hole generation at pore tips, (2) hole diffusion and (3) electrochemical oxidation of the semiconductor to form etch products. Step 1 determines the overall etch rate. However, if the kinetics of Step 3 are slow relative to Step 2, then etching can occur at preferred crystallographic sites leading to pore propagation in preferential directions. We have implemented the fundamental rules of this mechanism in a numerical simulation of this mechanism and we show that the simulation reproduces many of the features of pore growth in InP.

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Section: Introductionmentioning

confidence: 99%

Model of Formation and Propagation of Nanoporous Structures in Indium Phosphide during Anodisation in Aqueous KOH

Keyes

Quill²,

Bourke³

et al. 2018

ECS Trans.

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“…In semiconductors, localized etching can occur leading to selective removal of material such that the remaining material forms a skeletal structure that encompasses a network of pores. Si, SiC, Ge, Ge/Si alloys, and various II-VI and III-V compounds (including InP) can be made porous in such a manner [1][2][3][4][5][6][7][8][9][10][11][12][13] .…”

Section: Introductionmentioning

confidence: 99%

Propagation of Nanopores and Formation of Nanoporous Domains during Anodization of n-InP in KOH

et al. 2015

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Anodization of highly doped (1018 cm-3) n-InP in 2 – 5 mol dm-3 KOH under potentiostatic or potentiodynamic conditions results in the formation of a nanoporous sub-surface region. Pores originate from surface pits and an individual, isolated porous domain is formed beneath each pit in the early stages of anodization. Each such domain is separated from the surface by a thin non-porous layer (typically ~40 nm) and is connected to the electrolyte by its pit. Pores emanate from these points along the <111>A crystallographic directions to form domains with the shape of a tetrahedron truncated symmetrically through its center by a plane parallel to the surface of the electrode. We propose a three-step model of electrochemical pore formation: (1) hole generation at pore tips, (2) hole diffusion and (3) electrochemical oxidation of the semiconductor to form etch products. Step 1 determines the overall etch rate. However, if the kinetics of Step 3 are slow relative to Step 2, then etching can occur at preferred crystallographic sites leading to pore propagation in preferential directions.

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“…The morphology of these porous layers can vary wildly between different semiconductors (13), and for an individual semiconductor with the variation of temperature (14), composition (15,16) and concentration (17) of electrolyte, and orientation (18) and doping density (19) of the substrate. Many different pore morphologies have been observed and several models have been proposed (20)(21)(22)(23)(24)(25)(26)(27)(28)(29)(30)(31)(32) to explain them. However, it is generally accepted that the propagation of nanopores in highly doped n-type semiconductors is controlled by hole generation under the influence of a high electric field due to the small radius of curvature at the pore tip (29,30).…”

Section: Introductionmentioning

confidence: 99%