Comments on “Incomplete transformation induced multiple-step transformation in TiNi shape memory alloys” [Scripta Mater 2005;53:335]

Temperature memory effect and its stability revealed via differential scanning calorimetry in ethylene‐vinyl acetate within glass transition range

“…35 is similar to that in most SMAs under the reverse martensitic transformation. 39,40 In comparison with the TME (via DSC test) in SMA [39][40][41] and in the polymer based on melting transition, 35 it can be concluded that (a)-(c) are common features shared by all of them.…”

Mechanisms of the Shape Memory Effect in Polymeric Materials

“…Originally, the TME refers to the ability of a material to remember the maximum heating temperature in a previous single or cyclic heating process and to reveal this maximum temperature in a later heating process, most likely by means of examining the heat flow versus heating temperature results from a differential scanning calorimeter (DSC) test [122,123].…”

Growth mechanisms of Cu3Sn on polycrystalline and single crystalline Cu substrates

“…When the Cu supply to the interface cannot not keep up with the high Cu flux additional vacancies will be generated. Further condensation of the vacancies will lead to void formation at the interface [14,15]. This segregation-induced void is considered to be different from a classic Kirkendall void, because it forms at the Cu/ Cu 3 Sn interface following Bi segregation and locates at the Cu side accompanying Bi particles, while a Kirkendall void could also be detected within the Cu 3 Sn layer and needed a longer time to form, without elemental segregation.…”

“…In theory there should also be a layer of Cu 3 Sn between the Cu and Cu 6 Sn 5 , but Cu 3 Sn is often too thin after reflow to be readily detected by scanning electron microscopy (SEM) because of its limited resolution. Although the Cu 3 Sn layer is thin (on the nanometer scale) after a short reflow time and grows slowly in the subsequent solid state aging compared with Cu 6 Sn 5 , it plays a critical role in determining the reliability of a solder interface, as Cu 3 Sn or its interface with Cu is prone to voiding, either by the Kirkendall effect or by solute segregation [13][14][15]. Therefore, it is necessary to understand the growth mechanism of the Cu 3 Sn phase in order to address reliability concerns on interfacial voiding.…”