“…Available literature related to the hydrogenation semiconductor capacitors, which realize a high electrical of pure Ta is limited to hydrogen embrittlement. This hydrogen-induced cracking recrystallized microstructure with a grain size of about 100 or pulverization is caused by hydrogen absorbtion, which m. Some of them were electropolished in a solution of 2.5 has been reported in Ti alloys, [4,5,6] rare-earth-transitionpct HF and 5.0 pct H 2 SO 4 in methanol at about 230 K, [18] metal magnets, [4,7] refractory alloys, [4,[8][9][10][11][12][13] and hydrogen which were supplied for microstructure observation. [1,2] In order to improve the pure Ta, it is necessary to understand the mechanism of electrical properties as a device, it is essential to fabricate hydrogen-induced cracking.…”