2014
DOI: 10.1364/oe.22.028623
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Compact 1D-silicon photonic crystal electro-optic modulator operating with ultra-low switching voltage and energy

Abstract: Abstract:We demonstrate a small foot print (600 nm wide) 1D silicon photonic crystal electro-optic modulator operating with only a 50 mV swing voltage and 0.1 fJ/bit switching energy at GHz speeds, which are the lowest values ever reported for a silicon electro-optic modulator. A 3 dB extinction ratio is demonstrated with an ultra-low 50 mV swing voltage with a total device energy consumption of 42.8 fJ/bit, which is dominated by the state holding energy. The total energy consumption is reduced to 14.65 fJ/bit… Show more

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Cited by 79 publications
(43 citation statements)
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“…Particularly, the 1D nanobeam PhC cavity is reasonably preferred as it shows the ability of further compressing the transverse dimension, while keeping a competent Q factor as 2D PhC cavity. This model is theoretically investigated and a high extinction ratio of 8 dB is predicted, with a tiny driving voltage of 0.05 V and an ultra-compact footprint of 6 µm [89]. However, as well known that modulation speed is simultaneously governed by the RC impedance and the photon lifetime, the excessive Q factor (e.g., few millions in [89]) which the high modulation efficiency benefits from has put a ceiling of 3 Gb/s in this configuration.…”
Section: Silicon Photonic Crystal Modulatorsmentioning
confidence: 99%
“…Particularly, the 1D nanobeam PhC cavity is reasonably preferred as it shows the ability of further compressing the transverse dimension, while keeping a competent Q factor as 2D PhC cavity. This model is theoretically investigated and a high extinction ratio of 8 dB is predicted, with a tiny driving voltage of 0.05 V and an ultra-compact footprint of 6 µm [89]. However, as well known that modulation speed is simultaneously governed by the RC impedance and the photon lifetime, the excessive Q factor (e.g., few millions in [89]) which the high modulation efficiency benefits from has put a ceiling of 3 Gb/s in this configuration.…”
Section: Silicon Photonic Crystal Modulatorsmentioning
confidence: 99%
“…The parallel-plate capacitance (= ε 0 ε InGaAs L abs T j /d j ) is less than 0.2 fF for an absorber length L abs < 3 μm. However, for an ultrasmall junction, the fringing field contribution of the junction also becomes significant, and hence it is important to include the fringe capacitance [21]. This contribution was simulated by the FEM with a full 3-D model excluding the large electrical pads, and the total capacitance exceeded that of the parallel plate model.…”
Section: Device Structure and Capacitancementioning
confidence: 99%
“…The parallel-plate capacitance is less than 0.2 fF for L abs < 3.4 μm thanks to the ultrasmall dimensions, and is much smaller than those of the Ge-waveguide PDs with 4-5 fF [17,18]. However, for an ultrasmall junction, the fringing field contribution of the junction also becomes significant, and hence it is important to include the fringe capacitance [20]. This contribution was fully simulated by the finite-element method (FEM) with a full 3-D model, and is shown by red plots.…”
Section: Research Articlementioning
confidence: 99%