2004
DOI: 10.1109/ted.2003.821379
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Compact Analytical Physical-Based Model of LTPS TFT for Active Matrix Displays Addressing Circuits Simulation and Design

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Cited by 13 publications
(8 citation statements)
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“…It is assumed that the GB exists in poly-Si and extends towards the protrusion peak. However, the previous reports did not consider the amount of carrier traps at the GB protrusion which was clearly under-estimated numerical approaches [28]. Dimitriadis and Tassis reported a two-dimensional (2-D) numerical simulation approach where a continuous distribution of carrier traps in the energy gap consisting a broad peak close to midgap and an exponential band tail [29].…”
Section: Density Of States (Dos)mentioning
confidence: 99%
“…It is assumed that the GB exists in poly-Si and extends towards the protrusion peak. However, the previous reports did not consider the amount of carrier traps at the GB protrusion which was clearly under-estimated numerical approaches [28]. Dimitriadis and Tassis reported a two-dimensional (2-D) numerical simulation approach where a continuous distribution of carrier traps in the energy gap consisting a broad peak close to midgap and an exponential band tail [29].…”
Section: Density Of States (Dos)mentioning
confidence: 99%
“…Polycrystalline silicon (poly-Si) is technologically important in a range of applications from CMOS integrated circuits to large area electronics such as solar cells and thinfilm-transistor based devices. [1][2][3][4][5][6] An important area of study is the crystallization of relatively low-cost a-Si to form high quality poly-Si (Refs. 1 and 5-11).…”
Section: Introductionmentioning
confidence: 99%
“…Such problem will result in a nonuniform spatial distribution of electrostatic potential and causes significant variation of threshold voltage (V th ) in the driving transistors. There are two ways for improvement; one is to develop a new active-matrix driving method and reduce the variation by compensation technique [6]. The other is to adopt advanced gate structures, although proper models for trap states at grain boundaries have to be developed [7].…”
Section: Introductionmentioning
confidence: 99%