Compact and Fast-Response Voltage Clamp for Bi-Directional Signal Swing Interface Applications

He, Linfeng; Salcedo, Javier A.; Parthasarathy, S.; Zhou, Yuanzhong; Hajjar, Jean-Jacques; Sundaram, Kalpathy B.

doi:10.1109/led.2018.2875714

Cited by 27 publications

(16 citation statements)

References 8 publications

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“…We have never seen this behavior before in GaN‐based devices and so far, the interpretation of E1 is not yet clear. We have considered trapping of the holes at the p‐GaN/AlGaN interface [ 24 ] or tunneling into border traps in the AlGaN barrier, [ 25 ] although none of these mechanisms are consistent with the temperature‐independent behavior.…”

Section: Resultsmentioning

confidence: 99%

Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy

Hsu

Simoen

Liang

et al. 2021

Physica Status Solidi (a)

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To investigate the defects from the gate regrowth process, samples with and without regrowth p‐GaN process are fabricated by metalorganic chemical vapor deposition (MOCVD). The DC characteristics indicate larger gate leakage (Igs) between the GaN channel and the p‐GaN gate in the regrowth sample than in the nonregrowth counterpart. In addition, significant Si/O impurities are introduced by the regrowth process at the interface between channel and regrown AlGaN barrier. The low‐frequency noise (LFN) measurement and deep‐level transient spectroscopy (DLTS) are further carried out to investigate the defectivity at the AlGaN barrier and channel interface, giving a 2–3 times higher border trap density in the AlGaN barrier (depth ≈5 nm from the channel interface) and a 10 times increase in interface trap density at the channel interface, corresponding with a band of shallow levels E3 = Ec–0.02–0.15 eV. Three additional bulk traps E2/E5 (Ec–0.8 eV, σn=5×10−15 cm2 / Ec–0.17 eV, σn=5×10−22 cm2) and E4 (Ec–0.23 eV, σn=5×10−19 cm2) are also found in the regrowth and nonregrowth samples, respectively. Their possible spatial locations and origins are discussed.

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Section: Resultsmentioning

confidence: 99%

Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy

Hsu

Simoen

Liang

et al. 2021

Physica Status Solidi (a)

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“…There are multiple parameters to evaluate the device quality of GaN‐based HEMTs, such as breakdown voltage ( V BD ), threshold voltage ( V th ), and on‐state resistance ( R on ). [ 21–24 ] In this paper, we will review a series of effective technical means that can improve the critical device characteristics of GaN power HEMTs, and focus on the recently innovative device structures and technologies. In Section 2, we provide a brief introduction on the conventional normally‐on GaN HEMT structure, and illustrate several effective approaches to achieve normally‐off GaN HEMTs.…”

Section: Introductionmentioning

confidence: 99%

Recent Advances in GaN‐Based Power HEMT Devices

Cheng

Wang

et al. 2021

Adv Elect Materials

135

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The ever‐increasing power density and operation frequency in electrical power conversion systems require the development of power devices that can outperform conventional Si‐based devices. Gallium nitride (GaN) has been regarded as the candidate for next‐generation power devices to improve the conversion efficiency in high‐power electric systems. GaN‐based high electron mobility transistors (HEMTs) with normally‐off operation is an important device structure for different application scenarios. In this review, an overview of a series of effective approaches to improve the performance of GaN‐based power HEMT devices is given. Modified epistructures are presented to suppress defects and current leakage, and low‐damage recess‐free processes are discussed in fabricating normally‐off HEMTs. Possible effects of dielectrics on a metal–insulator–semiconductor (MIS) structure are also intensively introduced. Metal/semiconductor contact engineering is investigated, and fabrication of Au‐free ohmic contact and graphene insertion layer to enhance the device performance is emphasized. Finally, the effects of field plates are studied through the use of simulated and fabricated devices.

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“…6) is among the lowest. 11,23,24) This may be correlated with the difference in surface band-bending and the corresponding surface charge density, as the barrier height appears strongly influenced by Fermi-level pinning in β-Ga 2 O 3 . 20,25) The lowest interface charge density on the (100)-like surfaces indicates that this surface may be least susceptible to surface damage, which is likely linked with easy exfoliation of (100)oriented β-Ga 2 O 3 flakes due to the strong in-plane covalent bonds and weak perpendicular bonds.…”

mentioning

confidence: 99%

Fin-channel orientation dependence of forward conduction in kV-class Ga₂O₃ trench Schottky barrier diodes

Nomoto

et al. 2019

Appl. Phys. Express

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Ga2O3 vertical trench Schottky barrier diodes with four different fin-channel orientations are realized on (001) substrates and compared. Fin-channels along the [010] direction with (100)-like sidewalls result in the highest forward current, while other channel orientations all lead to a shallow turn-on behavior and much lower forward current, indicative of severe sidewall depletion attributed to negative interface charges. The comparison indicates that the interface charge density is the smallest on the (100)-like surfaces. The breakdown voltage of the diodes with 1-μm fin width is around 2.4 kV, with no apparent dependence on the channel orientation.

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Compact and Fast-Response Voltage Clamp for Bi-Directional Signal Swing Interface Applications

Cited by 27 publications

References 8 publications

Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy

Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy

Recent Advances in GaN‐Based Power HEMT Devices

Fin-channel orientation dependence of forward conduction in kV-class Ga₂O₃ trench Schottky barrier diodes

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Compact and Fast-Response Voltage Clamp for Bi-Directional Signal Swing Interface Applications

Cited by 27 publications

References 8 publications

Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy

Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep‐Level Transient Spectroscopy

Recent Advances in GaN‐Based Power HEMT Devices

Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes

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Product

Resources

About

Fin-channel orientation dependence of forward conduction in kV-class Ga₂O₃ trench Schottky barrier diodes