Compact and low power consumption tunable photonic crystal nanobeam cavity

Fegadolli, William S.; Oliveira, J.E.B.; Almeida, Vilson R.; Scherer, Axel

doi:10.1364/oe.21.003861

Cited by 51 publications

(23 citation statements)

References 24 publications

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“…The purpose of this oxide layer is not only to make the optical mode symmetric, but also to optically isolate the optical layer from the metal layer, required by the micro-heaters. This isolation helps to avoid absorption loss from metal layer, for both light propagating inside ring resonators and the waveguide; however, the oxide layer still allows enough heat transfer from the thermal layer to the optical layer as previously demonstrated [9].…”

Section: Fabricationmentioning

confidence: 90%

“…1). The gap distance between the microring resonators and the bus waveguide is 250 nm; the radius of the ring resonators is 10 µm; the width and the height of the bus waveguide and ring resonators are 400 nm and 220 nm, respectively; and the widths of the heaters atop of the ring resonators are all set to be 2.5 µm, similar to the parameter used in our previous works [9,25].…”

Section: Fabricationmentioning

confidence: 99%

“…For the past decade, several research groups have demonstrated essential building blocks to process optical signals, for example: efficient and broadband input/output coupling systems from optical fibers to optical waveguides [3], high-speed electro-optic modulators [4][5][6], chip-scale ultrafast pulse compressor [7], tunable filters [8,9], polarization-independent devices [10], heterogeneous integration on silicon-on-insulator (SOI) to produce light sources and photodetectors [11][12][13][14][15][16][17][18][19], as well as unidirectional [20] and nonreciprocal devices [21,22], amongst others.…”

Section: Introductionmentioning

confidence: 99%

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Experimental demonstration of a reconfigurable silicon thermo-optical device based on spectral tuning of ring resonators for optical signal processing

Fegadolli¹,

Feng²,

Rahman³

et al. 2014

Opt. Express

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Abstract:We have experimentally demonstrated a reconfigurable silicon thermo-optical device able to tailor its intrinsic spectral optical response by means of the thermo-optical control of individual and uncoupled resonant modes of micro-ring resonators. Preliminarily results show that the device's optical response can be tailored to build up distinct and reconfigurable logic levels for optical signal processing, as well as control of overall figures of merit, such as free-spectral-range, extinction ratio and 3dB bandwidth. In addition, the micro-heaters on top of the ring resonators are able to tune the resonant wavelength with efficiency of 0.25 nm/mW within a range of up to 10 nm, as well as able to switch the resonant wavelength within fall and rise time of 15 μs.

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Section: Fabricationmentioning

confidence: 90%

Section: Fabricationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Experimental demonstration of a reconfigurable silicon thermo-optical device based on spectral tuning of ring resonators for optical signal processing

Fegadolli¹,

Feng²,

Rahman³

et al. 2014

Opt. Express

Self Cite

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“…Several groups have taken advantage of thermo-optic effects or free-carrier effects [8,9]. Other groups employed materials such as chalcogenide glass [10,11], photochromic thin film [12], and micro-fluid [13].…”

Section: Introductionmentioning

confidence: 99%

Low-voltage-tunable nanobeam lasers immersed in liquid crystals

Kim¹,

Kim²,

Son³

et al. 2014

Opt. Express

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Abstract:A low-voltage-tunable one-dimensional nanobeam laser is realized by employing lithographically defined lateral electrodes. An InGaAsP nanobeam with a sub-micrometer width is transfer-printed in the middle of two electrodes using a polydimethylsiloxane stamp. Spectral tuning is achieved by controlling the molecular alignment of the surrounding liquid crystals (LCs). From μm-scale-gap structures, a total wavelength shift that exceed 6 nm is observed at a low voltage of less than 10 V. A measured spectral tuning rate of 0.87 nm/V, which is the largest value ever reported to our knowledge among LC-tuned photonic crystal lasers, was also noted. Lehman, "Tunable two-dimensional photonic crystals using liquid-crystal infiltration," Phys. Rev. B 61(4), R2389-R2392 (2000). 17. Ch. Schuller, F. Klopf, J. P. Reithmaier, M. Kamp, and A. Forchel, "Tunable photonic crystals fabricated in III-V semiconductor slab waveguides using infiltrated liquid crystals," Appl. Phys. Lett. 82(17), 2767-2769 (2003). 18. A. Casas Bedoya, S. Mahmoodian, C. Monat, S. Tomljenovic-Hanic, C. Grillet, P. Domachuk, E. C. Mägi, B. J.Eggleton, and R. W. van der Heijden, "Liquid crystal dynamics in a photonic crystal cavity created by selective microfluidic infiltration," Opt. Express 18(26), 27280-27290 (2010

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“…Simulations were made using finite-difference time-domain (FDTD) models, where the well-known techniques to design 1D photonics crystal nanobeam cavities with the desired figures of merits were employed [16][17][18][19].…”

mentioning

confidence: 99%

Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics

et al. 2013

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We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578 nm with a low threshold power of ∼14.7 μW. Laser gain is provided from a single InAsP quantum well embedded in a 155 nm InP layer bonded on a standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of 0.375λ∕n 3 , is a promising and efficient light source for silicon photonics. However, the capability of generating light on silicon has been one of the daunting problems to overcome owing to its indirect electronic bandgap [9]. Faced with this long-standing issue, several research groups have proposed heterogeneous integration of III-V quantum well (QW) materials on top of silicon structures to generate light at the telecommunication wavelengths [9][10][11][12][13][14][15].In this Letter, we demonstrate a novel low threshold and optically pumped single QW nanobeam laser, defined by means of a heterogeneous integration of an InP layer (with a single InAs 0.65 P 0.35 QW embedded) on silicon-on-insulator.First, we focused on the design of the heterogeneous InP/Si nanobeam cavity and pursued a high Q-factor in an attempt to reduce the lasing threshold. Simulations were made using finite-difference time-domain (FDTD) models, where the well-known techniques to design 1D photonics crystal nanobeam cavities with the desired figures of merits were employed [16][17][18][19].Preliminarily simulations showed that a hybrid bilayer of 155 nm thick InP on top of 220 nm thick silicon-oninsulator, 500 nm wide, and holes suitably designed can form a heterogeneous nanobeam cavity with a theoretical Q-factor as high as 2.27 × 10 6 and modal volume as low as 0.375λ∕n 3 . To attain such figures of merit, the reflector sections of the cavity are designed with a periodic structure of 13 holes, drilled through both layers of InP and Si, with periodicity α 370 nm. In addition, a linear tapered section (from 0.28α to 0.22α) is suitably designed with five holes, drilled through both layers, to precisely phase match the waveguide and Bloch modes [17]. Finally, the Q-factor and resonant wavelength are tailored by varying the length of the dielectric section on the center of the nanobeam cavity [S in Fig. 1(b)].Figure 1(a) shows the theoretical Q-factor and resonant wavelength of the heterogeneous Si/InP nanobeam

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Compact and low power consumption tunable photonic crystal nanobeam cavity

Cited by 51 publications

References 24 publications

Experimental demonstration of a reconfigurable silicon thermo-optical device based on spectral tuning of ring resonators for optical signal processing

Experimental demonstration of a reconfigurable silicon thermo-optical device based on spectral tuning of ring resonators for optical signal processing

Low-voltage-tunable nanobeam lasers immersed in liquid crystals

Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics

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