Compact and Sensitive Millimetre Wave Detectors Based on Low Barrier Schottky Diodes on Impedance Matched Planar Antennas

Hoefle, Matthias; Haehnsen, Katharina; Oprea, Ion; Cojocari, Oleg; Penirschke, Andreas; Jakoby, Rolf

doi:10.1007/s10762-014-0090-z

Cited by 23 publications

(17 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Schottky diodes exploit the non-linearity of the IV characteristics to rectify an incoming RF signal. Narrow band designs reach noise equivalent powers (NEPs) of 0.4 pW/ √ Hz [2] in the upper microwave range (88 GHz) and a few pW/ √ Hz around 600 GHz [3]- [5]. An important design criterion for Schottky diodes is zero-bias operation in order to circumvent external noise contributions by a biasing circuit and to simplify the setup.…”

Section: Introductionmentioning

confidence: 99%

Broadband Terahertz Detection With Zero-Bias Field-Effect Transistors Between 100 GHz and 11.8 THz With a Noise Equivalent Power of 250 pW/$\sqrt{\text{Hz}}$ at 0.6 THz

Regensburger

Mukherjee

Schönhuber

et al. 2018

IEEE Trans. THz Sci. Technol.

View full text Add to dashboard Cite

We demonstrate UV contact-lithographically fabricated III-V field effect transistors examined over a bandwidth of 100 GHz to 11.8 THz. The zero-bias device reaches a noise equivalent power as low as 250 pW/ √ Hz at 0.6 THz which then increases as f 4 at higher frequencies. The responsivity is modeled by a simple equivalent circuit, showing good agreement over the frequency range of 2 decades. The FETs have been characterized using a photomixer, a quantum cascade laser and a free electron laser, proofing the versatility and large applicability of the detection concept.

show abstract

Section: Introductionmentioning

confidence: 99%

Broadband Terahertz Detection With Zero-Bias Field-Effect Transistors Between 100 GHz and 11.8 THz With a Noise Equivalent Power of 250 pW/$\sqrt{\text{Hz}}$ at 0.6 THz

Regensburger

Mukherjee

Schönhuber

et al. 2018

IEEE Trans. THz Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Recently, detectors based on low barrier Schottky diodes have demonstrated an outstanding voltage responsivity, up to 1600 mV/mW at 87.8 GHz [5]. As reported in [4], these diodes can also be integrated with a mm wave rectenna and operated in a large-signal rectifying mode.…”

Section: Introductionmentioning

confidence: 91%

“…In the case of single-diode half-wave rectification, it is preferable to connect the diode in series [5]. Following this recommendation, the rectifier integrated with 2 × 2 patches array has been designed, fabricated, and tested.…”

Section: The Schottky Diode Rectenna Elementmentioning

confidence: 99%

Characterization of a Schottky Diode Rectenna for Millimeter Wave Power Beaming Using High Power Radiation Sources

et al. 2017

View full text Add to dashboard Cite

Two principal elements play a role in a wireless power beaming system: a high power radiation source as the transmitter and a rectifying antenna (rectenna) as an RF to DC converter at the receiving site. A millimeter wave power transmission is analyzed using transmission system and a W-band rectenna based on a low-barrier Schottky diode. A quasi-optical approach is presented here, using free-space Gaussian propagation and optical ABCD matrices for lenses. Experiments are made to estimate the optimal load resistance and power handling capability of a single rectifier. A low power W-band tunable solid-state source delivering 0.4 W CW power equipped by the focusing lenses is used to characterize the responsivity of the rectenna. A pulsed power gyrotron is used to identify the diode breakdown point. It was found that the RF-to-DC conversion efficiency corresponding to the optimal load of 200 Ω is about 20.5% while the maximum DC power converted by the diode with optimal load is about 15 mW before breakdown.

show abstract

“…2). [46]); II -R j = 2.9 kΩ, C j = 5 fF, R s = 45 Ω, Z A = 100 -100⋅j Ω (InGaAs SBD, parameters from [46]); III -R j = 700 kΩ, C j = 8 fF, R s = 10 Ω, Z A = 100 Ω (Si SBD, parameters from [45]), IV -R j = 2.4 kΩ, C j + C P = 7.1 fF, R s = 5.5 Ω, Z A = 24 + 231⋅j Ω (InGaAs SBD, parameters from [6], resonant impedance matching at 89 GHz). The values NEP opt for Si SBD from [45] were shown, as it is in the bias regime when R j = 600 Ω (instead of 700 kΩ in the zero-bias regime that was taken to calculate the curve III).…”

Section: Thz Rectifying Detector Parametersmentioning

confidence: 99%

“…Uncooled SBD single detectors, as compared to other ones (e.g., Golay cell, pyroelectric, bolometer, FET, superlattice detectors, etc. ), at the moment seem to be the most sensitive within the low-frequency THz range (ν<~300 GHz) where their NEP can reach NEP ~10 -11 …4⋅10 -13 W/Hz 1/2 (see [3][4][5][6], for Refs. see also [7]) in dependence on the radiation frequency range, antenna and detector impedances, antenna-detector matching, etc.…”

Section: Introductionmentioning

confidence: 99%

Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 2. P. 129-138. DOI: http://dx.doi.org/10.15407/spqeo19.02.129 Performance limits of terahertz zero biased rectifying detectors for direct detection

Голенков¹,

Sizov²

2016

Semicond. Phys. Quantum Electron. Optoelectron.

View full text Add to dashboard Cite

Abstract. Performance limits of uncooled unbiased field effect transistors (FETs) and Schottky-barrier diodes (SBDs) as direct detection rectifying terahertz (THz) detectors operating in the broadband regime have been considered in this paper. Some basic extrinsic parasitics and detector-antenna impedance matching were taken into account. It has been concluded that, in dependence on radiation frequency, detector and antenna parameters, the ultimate optical responsivity (ℜ opt ) and optical noise equivalent power (NEP opt ) of FETs in the broadband detection regime can achieve ℜ opt ~ 23 kV/W and NEP opt ~ 1⋅10-12 W/Hz 1/2 , respectively. At low radiation frequency ν in the THz spectral region the NEP opt of SBD detectors can be better by a factor of ~1.75 as compared to that of Si MOSFETs (metal oxide semiconductor FETs) and GaAlN/GaN HFETs (heterojunction FETs) with comparable device impedances.

show abstract

Compact and Sensitive Millimetre Wave Detectors Based on Low Barrier Schottky Diodes on Impedance Matched Planar Antennas

Cited by 23 publications

References 21 publications

Broadband Terahertz Detection With Zero-Bias Field-Effect Transistors Between 100 GHz and 11.8 THz With a Noise Equivalent Power of 250 pW/$\sqrt{\text{Hz}}$ at 0.6 THz

Broadband Terahertz Detection With Zero-Bias Field-Effect Transistors Between 100 GHz and 11.8 THz With a Noise Equivalent Power of 250 pW/$\sqrt{\text{Hz}}$ at 0.6 THz

Characterization of a Schottky Diode Rectenna for Millimeter Wave Power Beaming Using High Power Radiation Sources

Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 2. P. 129-138. DOI: http://dx.doi.org/10.15407/spqeo19.02.129 Performance limits of terahertz zero biased rectifying detectors for direct detection

Contact Info

Product

Resources

About