Semiconductor Physics, Quantum Electronics & Optoelectronics. 2016. V. 19, N 2. P. 129-138. DOI: http://dx.doi.org/10.15407/spqeo19.02.129 Performance limits of terahertz zero biased rectifying detectors for direct detection

Abstract

Abstract. Performance limits of uncooled unbiased field effect transistors (FETs) and Schottky-barrier diodes (SBDs) as direct detection rectifying terahertz (THz) detectors operating in the broadband regime have been considered in this paper. Some basic extrinsic parasitics and detector-antenna impedance matching were taken into account. It has been concluded that, in dependence on radiation frequency, detector and antenna parameters, the ultimate optical responsivity (ℜ opt ) and optical noise equivalent power (NEP opt ) of FETs in the broadband detection regime can achieve ℜ opt ~ 23 kV/W and NEP opt ~ 1⋅10-12 W/Hz 1/2 , respectively. At low radiation frequency ν in the THz spectral region the NEP opt of SBD detectors can be better by a factor of ~1.75 as compared to that of Si MOSFETs (metal oxide semiconductor FETs) and GaAlN/GaN HFETs (heterojunction FETs) with comparable device impedances.

Terahertz radiation detectors: the state-of-the-art

“…Figure 6. The values of NEP opt in SBDs and the results of calculations (curves I-IV)[194]. The numbers at experimental points are the numbers of references pointed out in this paper.…”

“…The SBD uncooled rectifying detectors, that are two-terminal devices, have long been used since 1940s for microwave detection and mixing because of their high sensitivity and [194]. The numbers at experimental points are the numbers of references pointed out in this paper.…”

“…In calculations of curve IV, except resistance and capacitance, an inductance is included leading to a resonant impedance matching at ν≈89 GHz but at the same time resulting in poor NEP opt at higher radiation frequencies. Reproduced with permission from [194]. © 2016, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine.…”

Performance Comparison of SOI-Based Temperature Sensors for Room-Temperature Terahertz Antenna-Coupled Bolometers: MOSFET, PN Junction Diode and Resistor

“…Recently, the distributed self-mixing in the FET channel emerged as a mechanism of rectification at frequencies above its cutoff frequency [11][12][13], and the implementation in the CMOS platform has been studied intensively [14][15][16][17][18]. However, the performance of SBD and FET degrades rapidly with frequency [13], and thermal detectors, whose performance is relatively independent of frequency, become attractive at higher frequency if the temperature sensing scheme and thermal isolation structure are properly improved to attain higher performance [19]. The phenomenal thermal detector changes its material properties as a result of the temperature rise caused by the input radiation [20,21].…”