Compact electrothermal model of laboratory made GaN Schottky diodes

Górecki, Krzysztof; Górecki, Paweł

doi:10.1108/mi-11-2019-0068

Cited by 7 publications

(5 citation statements)

References 48 publications

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“…In the future, the reduction of the DPL model order reduction methodology will be considered in order to save simulation time, decrease a computational power requirements [47], and make the simulation process more efficient.…”

Section: Discussionmentioning

confidence: 99%

Investigation of Heat Diffusion at Nanoscale Based on Thermal Analysis of Real Test Structure

Raszkowski

Zubert

2020

Energies

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This paper presents an analysis related to thermal simulation of the test structure dedicated to heat-diffusion investigation at the nanoscale. The test structure consists of thin platinum resistors mounted on wafer made of silicon dioxide. A bottom part of the structure contains the silicon layer. Simulations were carried out based on the thermal simulator prepared by the authors. Simulation results were compared with real measurement outputs yielded for the mentioned test structure. The authors also propose the Grünwald–Letnikov fractional space-derivative Dual-Phase-Lag heat transfer model as a more accurate model than the classical Fourier–Kirchhoff (F–K) heat transfer model. The approximation schema of proposed model is also proposed. The accuracy and computational properties of both numerical algorithms are presented in detail.

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Section: Discussionmentioning

confidence: 99%

Investigation of Heat Diffusion at Nanoscale Based on Thermal Analysis of Real Test Structure

Raszkowski

Zubert

2020

Energies

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“…It can be inferred that the simulation runs were stopped as ΔT av reached 500 K. Afterward, SC tests were simulated. Such tests involve large power dissipation, and are typically used to quantify the device robustness under harsh and abnormal events (see e.g., [7,23,25,[44][45][46][47], all focused on SiC MOSFETs). In the SC experiment, the DUT is first biased in the OFF state with a given supply voltage applied to the drain, and then turned on with a single gate pulse (a gate resistance R GATE of 50 Ω was considered).…”

Section: Static and Dynamic Electrothermal Simulationsmentioning

confidence: 99%

Latest Advances in Electrothermal Models

2021

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His current research interests include modelling, analysis, and measurements of power semiconductor devices and power electronic networks containing IGBTs.vii Preface to "Latest Advances in Electrothermal Models" Dear Reader, For many years, tendencies to miniaturize electronic systems and to increase the power density dissipated in components of these systems have been observed. During the operation of electronic components, their internal temperature increases due to self-heating phenomena and mutual thermal couplings between components located on the common base. An increase in the device's internal temperature causes changes in the characteristics of electronic components, and also causes a decrease in the lifetime of these components. Therefore, one of the biggest problems in electronics at present is the accurate calculation of the values of the internal temperature of such components. Solving this task requires accurate models of the considered components and circuits, which take into account all important physical phenomena occurring in these components and circuits.Models including both electrical and thermal phenomena are called electrothermal models. Such models have been described in the literature for the last 50 years, but the development of electronic technology also leads to the development of electrothermal models of electronic components. New versions of such a class of models have different forms and are dedicated to different software for the computer analysis of electronic circuits, and they could also make it possible to shorten the duration of calculations. An effective electrothermal analysis also requires effective methods of estimation of the parameter values that exist in the used models.In recent years, we can observe dynamic developments in the abovementioned electrothermal models. This Special Issue of Energies is devoted to the latest advances in this area and contains eight articles. The first article presents the results of electro-thermal simulations of SiC power MOSFETs using a SPICE-like simulation program. The manner of automatic generation of a compact thermal model from accurate 3D mesh is described. The second article concerns the problem of modelling the thermal properties of inductors. A thermal model of an inductor proposed in this article takes into account the influence of power dissipated in the core and in the winding of the inductor, and the volume of the core, on the efficiency of heat removal. The third article deals with the problem of inserting a temperature sensor in the neighbourhood of a chip to monitor the junction temperature.The fourth article proposes a method of computations of the internal temperature of power LEDs situated in modules containing multiple-power LEDs, taking into account both self-heating in each power LED and mutual thermal couplings between each diode. The influence of the thermal pad's surface area on the device temperature is investigated. The fifth paper proposes an electrothermal averaged model of the diode-transistor switch, includ...

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“…Even though all the devices in development have a higher cost, they are attracting great technological interest [125]. Through its empirical analysis, the aim is to obtain information to optimize its performance and reduce unwanted defects such as deformation [126], considering that all these characteristics depend on temperature.…”

Section: Community Analysismentioning

confidence: 99%

Electronics and Its Worldwide Research

et al. 2020

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The contributions of researchers at a global level in the journal Electronics in the period 2012–2020 are analyzed. The objective of this work is to establish a global vision of the issues published in the Electronic magazine and their importance, advances and developments that have been particularly relevant for subsequent research. The magazine has 15 thematic sections and a general one, with the programming of 385 special issues for 2020–2021. Using the Scopus database and bibliometric techniques, 2310 documents are obtained and distributed in 14 thematic communities. The communities that contribute to the greatest number of works are Power Electronics (20.13%), Embedded Computer Systems (13.59%) and Internet of Things and Machine Learning Systems (8.11%). A study of the publications by authors, affiliations, countries as well as the H index was undertaken. The 7561 authors analyzed are distributed in 87 countries, with China being the country of the majority (2407 authors), followed by South Korea (763 authors). The H-index of most authors (75.89%) ranges from 0 to 9, where the authors with the highest H-Index are from the United States, Denmark, Italy and India. The main publication format is the article (92.16%) and the review (5.84%). The magazine publishes topics in continuous development that will be further investigated and published in the near future in fields as varied as the transport sector, energy systems, the development of new broadband semiconductors, new modulation and control techniques, and more.

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Compact electrothermal model of laboratory made GaN Schottky diodes

Cited by 7 publications

References 48 publications

Investigation of Heat Diffusion at Nanoscale Based on Thermal Analysis of Real Test Structure

Investigation of Heat Diffusion at Nanoscale Based on Thermal Analysis of Real Test Structure

Latest Advances in Electrothermal Models

Electronics and Its Worldwide Research

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