Compact Integrated Folded Šolc Filter using Periodic 90°-Domain Structures in KNbO₃Single Crystals

Abstract

A perpendicular magnetic tunnel junction (P-MTJ)-based one-transistor/one-resistor (1T-1R) binary content-addressable memory (CAM) is proposed for a high-density nonvolatile CAM. The proposed CAM cell performs an equality-search operation between an input bit and the corresponding stored bit by detecting the difference of a ''cell resistance'', where the cell resistance is determined by the series connection of one metal-oxide-semiconductor (MOS) transistor and one P-MTJ device. This circuit structure makes it possible to implement a compact nonvolatile CAM cell circuit with 1.25 m 2 of a cell size in a 0.14 m complementary MOS (CMOS)/P-MTJ process. Moreover, the equality-search operation in a bit-serial fashion is used for great reduction of the activity rate in the proposed CAM cell array, since most of the mismatched words in the CAM are detected by just several higher bits of comparison results in the word circuits. By applying a bit-level fine-grained power gating scheme, a fabricated 64-bit  128-word nonvolatile CAM achieves high density with maintaining low search energy under 3.1% of activity rate in the cell array. #

Phase Matching Characteristics of Second-Harmonic Generation in Periodic 90°-Domain Structures of KNbO3

“…12) Recently, the artificial fabrication and fabrication controllability of 60 -and 90 -domain structures in KNbO 3 single crystals have been investigated by electric poling technique at room temperature. [12][13][14] Several applications utilizing those structures such as the compact integrated folded S ˇolc filter 15) and the second-harmonic generator were also demonstrated. 16) It turned out that the periodic 90domain structures in KNbO 3 can be useful as QPM structures, because the coercive electric field applied for 90 -domain engineering is much lower than those required for creating other domain structures in KNbO 3 .…”