Compact Model for Carbon Nanotube Field-Effect Transistors Including Nonidealities and Calibrated With Experimental Data Down to 9-nm Gate Length

Luo, Jianjun; Wei, Lan; Lee, Chi-Shuen; Franklin, Aaron D.; Guan, Xialing; Pop, Eric; Antoniadis, D.A.; Wong, Hang

doi:10.1109/ted.2013.2258023

Cited by 68 publications

(53 citation statements)

References 50 publications

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“…The results of that analysis can be summarized as follows. The models in [10]- [14] only focus on digital applications and low voltages and, thus, the static drain current while modeling of the nonlinear tube charge is neglected or far too simplistic for RF purposes. The models in [10], [12], and [15] describe the static drain current with an explicit solution of the Landauer equation, assuming a bias-independent average transmission factor.…”

mentioning

confidence: 99%

A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications

Schröter

Haferlach

Pacheco‐Sanchez

et al. 2015

IEEE Trans. Electron Devices

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A compact large-signal model, called Compact Carbon Nanotube Model (CCAM), is presented that accurately describes the shape of DC and small-signal characteristics of fabricated carbon nano-tube FETs (CNTFETs). The new model consists of computationally efficient and smooth current and charge formulations. The model allows, for a given gate length, geometry scaling from single-finger single-tube to multifinger multitube transistors. Ambipolar transport, temperature dependence with self-heating, noise, and a simple trap model have also been included. The new model shows excellent agreement with the data from both the Boltzmann transport equation and measurements of Schottky-barrier CNTFETs and has been implemented in Verilog-A, making it widely available across circuit simulators. IndexTerms-Carbon nanotube field-effect transistor (CNTFET), compact transistor modeling, high-frequency circuit design.

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confidence: 99%

A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications

Schröter

Haferlach

Pacheco‐Sanchez

et al. 2015

IEEE Trans. Electron Devices

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“…For short-channel devices at a small gate voltage V gs in the subthreshold region, the thermionic current approximation is not adequate because of a direct source-to-drain tunneling [30], [32], [51]. For the sake of simplicity, we develop a semiempirical model in this case.…”

Section: Devicesmentioning

confidence: 99%

“…where the subthreshold slope SS = (d log 10 I/dV gs ) −1 can be approximated by simple expressions including fitting parameters [8], [12], [30], [31] or extracted from either the experimental data [3], [4] or numerical calculations [15]. The subthreshold current, I sub , is smoothly connected to the TFE current at V F B .…”

Section: Devicesmentioning

confidence: 99%

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Analytical Drain Current Model of 1-D Ballistic Schottky-Barrier Transistors

Bejenari

Schröter

Claus

2017

IEEE Trans. Electron Devices

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Abstract-A new analytical model based on the WKB approximation for MOSFET-like one-dimensional ballistic transistors with Schottky-Barrier contacts has been developed for the drain current. By using a proper approximation of both the FermiDirac distribution function and transmission probability, an analytical solution for the Landauer integral was obtained, which overcomes the limitations of existing models and extends their applicability toward high bias voltages needed for analog applications. The simulations of transfer and output characteristics are found to be in agreement with the experimental data for sub 10 nm CNTFETs.Index Terms-Carbon-nanotube field-effect transistor (CNT-FET), analytical transport model, Schottky barrier (SB), tunneling, Wentzel-Kramers-Brillouin (WKB) approximation.

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“…In this regard, there have been many works, most of which have paid attention to ballistic conditions [1][2][3] and some have considered non-ballistic conditions as well [4,5]. Since the mean free path of electrons moving at carbon nanotubes is about 0.6 micron, which is much more than the usual channel length of carbon nanotube transistors, the assumption of ballistic transport is usually used in these transistors [6].…”

Section: Introductionmentioning

confidence: 99%

A mathematical space mapping model for ballistic carbon nanotube field-effect transistors

Emamifar

Yousefi

2015

Int Nano Lett

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In this study, a mathematical model is presented based on mathematical space mapping for ballistic carbon nanotube field-effect transistors. This model is generalized from another model that was based on the concept of neural space mapping to calculate the three parameters of a coarse model. These parameters were the threshold voltage, the Early voltage, and assumed constant k of a modified ''level 1'' MOSFET model in simulation program with integrated circuit emphasis (SPICE). In this work, three analytical relations are introduced to replace the neural networks of the main model. The comparisons between the proposed model and a well-known reference model, named FETToy, show that the proposed model had reasonable accuracy in terms of different biases and physical parameters.

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Compact Model for Carbon Nanotube Field-Effect Transistors Including Nonidealities and Calibrated With Experimental Data Down to 9-nm Gate Length

Cited by 68 publications

References 50 publications

A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications

A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications

Analytical Drain Current Model of 1-D Ballistic Schottky-Barrier Transistors

A mathematical space mapping model for ballistic carbon nanotube field-effect transistors

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