Compact model for undoped symmetric double gate comprising quantization effect

Abstract

In this paper we propose an analytical modification for Hu's model which is an analytical model for undoped symmetric double gate MOSFETs. This modification targets to include the energy states quantization effect on the drain current. This leads to correct the model behavior for ultra thin double gate. Moreover, we introduce a simple method to include the velocity saturation effect in the current equation. Comparison with device simulator results is finally presented to validate the proposed modifications.