Compact Modeling and Simulation of Heavy Ion Induced Soft Error Rate in Space Environment: Principles and Validation

Зебрев, Г. И.; Galimov, Artur M.

doi:10.1109/tns.2017.2678685

Cited by 20 publications

(12 citation statements)

References 30 publications

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“…where σ SAT it the saturation cross section, LET th is the LET threshold, W and s are the width and shape parameters of the Weibull distribution [12,13]. Fig 5 presents the acquired results.…”

Section: A Static Mode Testmentioning

confidence: 99%

Effects of Heavy Ion and Proton Irradiation on a SLC NAND Flash Memory

Luza

Besser

Gupta³

et al. 2019

2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)

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Space applications frequently use flash memories for mass storage data. However, the technology applied in the memory array and peripheral circuity are not inherently radiation tolerant. This work introduces the results of radiation test campaigns with heavy ions and protons on a SLC NAND Flash. Static tests showed different failures types. Single events upsets and raw error cross sections were presented, as well as an evaluation of the occurrences of the events. Characterization of effects on the embedded data registers was also performed.

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Section: A Static Mode Testmentioning

confidence: 99%

Effects of Heavy Ion and Proton Irradiation on a SLC NAND Flash Memory

Luza

Besser

Gupta³

et al. 2019

2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)

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“…This method is also discussed by Tang in [1]. For a wide class of the commercial (COTS) nanoscale (feature nodes < 100 nm) circuits the above-threshold ( C    ) ion cross section vs LET dependence can be approximated by a linear function [6,12,13]…”

Section: Direct Problem: Proton Induced Ser From Heavy Ion Testsmentioning

confidence: 99%

“…We have proposed the approach which relies exceptionally on the phenomenological dependence of the SEU cross section on LET     (  is LET), which already contains all essential information about the SEU processes (generation, node collection, circuit response, etc.) [13]. This approach allows us to develop an effective Monte Carlo computational scheme for the nuclear interaction induced SEU prediction (see Sec.…”

Section: Introductionmentioning

confidence: 99%

GEANT4 simulation of nuclear interaction induced soft errors in digital nanoscale electronics: Interrelation between proton and heavy ion impacts

Galimov

Galimova

Зебрев

2019

Nuclear Instruments and Methods in Physics Research Section A:

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A simple and self-consistent approach has been proposed for simulation of the proton-induced soft error rate based on the heavy ion induced single event upset cross-section data and vice versa. The approach relies on the GEANT4 assisted Monte Carlo simulation of the secondary particle LET spectra produced by nuclear interactions. The method has been validated with the relevant in-flight soft error rate data for space protons and heavy ions. An approximate analytical relation is proposed and validated for a fast recalculation between the two types of experimental data.

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“…LS Pinsky of Houston Univ., USA incorporate heavy ions into the FLUKA Monte-Carlo Transport code based on RQMD (Recalculate Quantum Molecular Dynamics). The highest energy is raised from 100 MeV/A up to 5 GeV/A, and is used primarily by NASA for space radiation research [150].…”

Section: Mathematical Simulation and Optimization Of Single Particle mentioning

confidence: 99%

TSV Technology and High-Energy Heavy Ions Radiation Impact Review

Tian

Liu

2018

Electronics

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Three-dimensional integrated circuits (3D IC) based on TSV (Through Silicon Via) technology is the latest packaging technology with the smallest size and quality. As a result, it can effectively reduce parasitic effects, improve work efficiency, reduce the power consumption of the chip, and so on. TSV-based silicon interposers have been applied in the ground environment. In order to meet the miniaturization, high performance and low-cost requirements of aerospace equipment, the adapter substrate is a better choice. However, the transfer substrate, as an important part of 3D integrated circuits, may accumulate charge due to heavy ion irradiation and further reduce the performance of the entire chip package in harsh space radiation environment or cause it to fail completely. Little research has been carried out until now. This article summarizes the research methods and conclusions of the research on silicon interposers and TSV technology in recent years, as well as the influence of high-energy heavy ions on semiconductor devices. Based on this, a series of research methods to study the effect of high-energy heavy ions on TSV and silicon adapter plates is proposed.Electronics 2018, 7, 112 2 of 29 wafer was invented by M.G Smith et al. [2], which opposite surfaces were connected ohmically to the degenerately doped portions to be electrically connected along the thru-connection. With further research and exploration, 2.5D/3D integration technology with TSV realized integrated circuits with advantages of high interconnection density, high performance, low power consumption, and low cost [3,4]. In addition, the core is widely considered to be the leading technology in the field of high density packaging in the future and is an effective way to break through Moore's Law [5][6][7]. Figure 1. Silicon interposer through electrical copper coating technology production: (a) The construction of through-silicon via on the wafer; (b) The dry film etchant is stuck on the wafer, then exposed and etched; (c) Hole plating and pad fabrication by electroplating methods; (d) The photoresist removing. Adapted with permission from [27], Copyright Elsevier, 2016.

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Compact Modeling and Simulation of Heavy Ion Induced Soft Error Rate in Space Environment: Principles and Validation

Cited by 20 publications

References 30 publications

Effects of Heavy Ion and Proton Irradiation on a SLC NAND Flash Memory

Effects of Heavy Ion and Proton Irradiation on a SLC NAND Flash Memory

GEANT4 simulation of nuclear interaction induced soft errors in digital nanoscale electronics: Interrelation between proton and heavy ion impacts

TSV Technology and High-Energy Heavy Ions Radiation Impact Review

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