Compact modeling and simulation of nanoscale fully depleted DG-SOI MOSFETS

Abstract

A two dimensional analytical model for nanoscale fully depleted double gate SOI MOSFET is presented. Green's function solution technique is adopted to solve the two dimensional Poisson's equation using Dirichlet's and Neumann's boundary conditions at silicon-silicon di-oxide interface. Based on the derived 2D potential distribution, surface potential distributions in the Si film are analytically obtained. The calculated minimum surface potential is used to develop an analytic threshold voltage model. Simulation is done using ATLAS simulator for a 65 nm device and the results obtained are compared with the proposed 2D model. The model results are found to be in good agreement with the simulated data and other published results.

Green's function approach for modeling of electrostatic effects in nanoscale fully depleted double‐gate silicon‐on‐insulator metal‐oxide‐semiconductor field‐effect transistors

“…Figure 7 shows front surface potential distribution along the surface channel for L = 65 nm under the specific bias conditions, that is, V bs = 0V, V ds = 0.6V and V gs = 0.3V. Solid curve represents the calculated results using our developed model with the specified source-drain cylindrical junction, and the dashed curve represents results of our recently developed model [14] with rectangular-shaped junction. Moreover, it is obviously shown that the barrier lowering effect for a rectangular-shaped junction is larger than that for a cylindrical junction.…”

“…where t of (t ob ) is front (back)-gate oxide thickness. Using Greens theorem [14], 2D potential distribution in region 2 is…”

“…Using Greens theorem , 2D potential distribution in region 2 is where E g is band gap given by n i is intrinsic carrier concentration given by D sf ( x ) is electric displacement at front Si − SiO 2 interface, D sb ( x ) is electric displacement at back Si − SiO 2 interface and are defined elsewhere (APPENDIX A).…”