Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics

Abstract

In this paper, an advanced electrothermal simulation strategy is applied to a 3.3 kV silicon carbide MOSFET power module. The approach is based on a full circuital representation of the module, where use is made of the thermal equivalent of the Ohm’s law. The individual transistors are described with subcircuits, while the dynamic power-temperature feedback is accounted for through an equivalent thermal network enriched with controlled sources enabling nonlinear thermal effects. A synchronous step-up DC-DC converter and a single-phase inverter, both incorporating the aforementioned power module, are simulated. Good accuracy was ensured by considering electromagnetic effects due to parasitics, which were experimentally extracted in a preliminary stage. Low CPU times are needed, and no convergence issues are encountered in spite of the high switching frequencies. The impact of some key parameters is effortlessly quantified. The analysis witnesses the efficiency and versatility of the approach, and suggests its adoption for design, analysis, and synthesis of high-frequency power converters in wide-band-gap semiconductor technology.

Methods of Fast Analysis of DC–DC Converters—A Review

“…It results from the fact that thermal resistance of a semiconductor component is not constant, as it is assumed in linear thermal models based on the Foster and Cauer networks [84]. In the models described in [81,82], the value of thermal resistance depends on the power emitted in it, and in [67,85]-on the junction temperature of the semiconductor device and the ambient temperature.…”

“…They cause an increase in the temperature of the components during their operation [65,66]. Thermal couplings occur not only between the components, but also inside them, e.g., in the case of power modules between semiconductor structures placed in the common case [67,68], and in the case of inductive components between the core and its windings [69,70].…”

PFC Single-Phase AC/DC Boost Converters: Bridge, Semi-Bridgeless, and Bridgeless Topologies

“…This work analyzes four main aspects: (1) (recommended) in frequencies between 100 KHz and 200 KHz, so that GaN and SiC switches present better efficiency (lower losses) than conventional IGBTs and MOSFETs. More information concerning these switch technologies is available in [48][49][50]). In general terms, switching with ZVS or ZCS increases the switch useful life.…”

Metallization, Material Selection, and Bonding of Interconnections for Novel LTCC and HTCC Power Modules

“…Ceramic baseplates are used in power modules for electrical motor drives [12]. The most important feature of ceramic is that it withstands high temperatures and has a lower heat resistivity compared to commonly used materials [13].…”