Compact Modeling of Floating-Base Effect in Injection-Enhanced Insulated-Gate Bipolar Transistor Based on Potential Modification by Accumulated Charge

Yamamoto, Takao A.; Miyake, M.; Miura-Mattausch, Mitiko

doi:10.7567/jjap.52.04cp07

Cited by 4 publications

(3 citation statements)

References 16 publications

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“…The conventional HiSIM-IGBT is constructed by combining the surface-potential-based MOSFET part and the bipolar junction (BJT) transistor part, considering the carrier distribution within the base region explicitly. [14][15][16] Those two parts are connected by a conductivity-modulated base resistance, as schematically shown in Fig. 1(a).…”

Section: Floating-base Region Structure Modeling and Calculation Resultsmentioning

confidence: 99%

“…We have developed the compact model HiSIM (Hiroshima-university STARC IGFET Modal)-IEGT based on the conventional IGBT model HiSIM-IGBT, [15][16][17] on the basis of the surface-potential modeling approach, including the advanced MOSFET model HiSIM. [18][19][20] The main development was modeling hole accumulation in the floating-base for C gg calculations.…”

Section: Introductionmentioning

confidence: 99%

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Compact modeling of injection-enhanced insulated-gate bipolar transistor for accurate circuit switching prediction

Yamamoto

Miyake

Kato

et al. 2014

Jpn. J. Appl. Phys.

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Several techniques are nowadays available to determine the size distribution of nanoparticulate matter. Among these techniques, atomic force microscopy (AFM) is especially valuable because it can provide three-dimensional information on the shape of individual nanoparticles. This paper describes a new method to determine the size distribution of a population of spherical nanoparticles deposited on a hard substrate. The method is based on the acquisition and analysis of topographical AFM images. The size of individual nanoparticles is obtained by fitting the topographical region associated with the nanoparticle with a sphere. Tests on model systems based on nanoparticle reference materials consisting of polystyrene (PS) latex suspensions show promising results. The measured mean particle size is larger than the reference value, but this is a predictable effect of the AFM tip shape. Tests on a bi-modal mixture of two PS latex reference materials show the impact of the quality of the dispersion of the nanoparticles on the results obtained with the new technique.

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Section: Floating-base Region Structure Modeling and Calculation Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Compact modeling of injection-enhanced insulated-gate bipolar transistor for accurate circuit switching prediction

Yamamoto

Miyake

Kato

et al. 2014

Jpn. J. Appl. Phys.

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“…However, the accuracy of the IGBT-switching waveforms, obtained with the previously reported compact IGBT models, is still not sufficient for predicting the switching losses of circuits with the required precision. These accuracy deficiencies become particularly large for recently developed improvements of the basic IGBT structure [19], [20].…”

Section: Introductionmentioning

confidence: 99%

Compact Modeling of IGBT Charging/Discharging for Accurate Switching Prediction

Miyaoku

Tone

Matsuura

et al. 2020

IEEE J. Electron Devices Soc.

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The trench-type IGBT is one of the major devices developed for very high-voltage applications, and has been widely used for the motor control of EVs as well as for power-supply systems. In the reported investigation, the accurate prediction of the power dissipation of IGBT circuits has been analyzed. The main focus is given on the carrier dynamics within the IGBTs during the switching-off phase. It is demonstrated that discharging and charging at the IGBT's gate-bottom-overlap region, where electron discharging is followed by hole charging, has an important influence on the switching performance. In particular, the comparison of long-base and short-base IGBTs reveals, that a quicker formation of the neutral region within the resistive base region, as occurring in the long-base IGBT, leads to lower gatebottom-overlap capacitance, thus realizing faster electron discharging and hole charging of this overlap region.

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