Compact Modeling of IGBT Charging/Discharging for Accurate Switching Prediction

Abstract

The trench-type IGBT is one of the major devices developed for very high-voltage applications, and has been widely used for the motor control of EVs as well as for power-supply systems. In the reported investigation, the accurate prediction of the power dissipation of IGBT circuits has been analyzed. The main focus is given on the carrier dynamics within the IGBTs during the switching-off phase. It is demonstrated that discharging and charging at the IGBT's gate-bottom-overlap region, where electron discharging is followed by hole charging, has an important influence on the switching performance. In particular, the comparison of long-base and short-base IGBTs reveals, that a quicker formation of the neutral region within the resistive base region, as occurring in the long-base IGBT, leads to lower gatebottom-overlap capacitance, thus realizing faster electron discharging and hole charging of this overlap region.

Digital Twins for Wind Energy Conversion Systems: A Literature Review of Potential Modelling Techniques Focused on Model Fidelity and Computational Load

“…In [127], a model was presented of the switching on/off dynamics of an IGBT. The temperature dependence of this switching on/off behaviour was modelled for high power IGBTs in [128,129].…”

“…Nevertheless, it allows combining the merits of different modelling techniques eventually leading to a more realistic virtual replica. Computational Fluid Dynamics [69] FEM structural blade model [70][71][72] Large Eddy Simulation (LES) [78][79][80] FEM model of turbine shaft [103] FEM model of the tower and support structure [89,90] Electromagnetic FEM [109][110][111] Dynamic switching models [127][128][129] Conduction and switching loss models [130,131] Transient wide-bandgap component models [132] Full pitch drivetrain models [150][151][152][153] Full yaw drivetrain models [154,155] Blade-Element Momentum [57] Extensions -Tip losses [60,61] -Dynamic stall [62,63] -Blade flexibility [64,65] -Tower and nacelle flow disturbance [66] -Gaussian [82] or Curl [83] wake model Surrogate models [73][74][75] Multi-body drivetrain model [101,102] Multi-body tower and foundation model [84][85][86]<...>…”

EMC Component Modeling and System-Level Simulations of Power Converters: AC Motor Drives

“…A detailed overview of the modeling techniques and different complexity levels of IGBT models can be found in [153,154]. Although several physical and behavioral models of the coupled MOSFET-BJT structure of an IGBT device are presented in the literature [145,146,[155][156][157][158][159][160][161][162][163][164][165][166][167], the parameter extraction procedures ask for simultaneous fitting to both static and dynamic device measurement data, which makes the modeling of IGBTs a rather complex task even for major manufacturers. Quite a few of them provide models of some IGBT devices (e.g., [165,166]) but the accuracy and stability of these models differ and the selection of an appropriate model for system level EMC simulations is still challenging.…”