Compact Noise Modeling Approach in Nano-scaled CSDG MOSFET for RF Switch

Abstract

The Cylindrical Surrounding Double-Gate (CSDG) MOSFET can be used to design nanotechnology-based switches that can select the signals from various antennas from/to transmitting receiving sections. This model has the advantages of reduced noise for the various switching circuit application of nanotechnology and radio-frequency technology compared to Double-Gate (DG) MOSFET. In this research, a noise model of CSDG MOSFET has been designed and analyzed to apply the nanotechnology regime with the focus on various noises.