Compact two-dimensional CMOS Hall sensor based on switchable configurations of four three-contact elements

Sander, C.; Leube, Carsten; Oliver, Paul

doi:10.1016/j.sna.2016.07.032

Cited by 8 publications

(6 citation statements)

References 42 publications

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“…Fig. 1 (a) shows a fully symmetric VHD (FSVHD) structure with four identical three-contact vertical Hall elements (3CVHE) [16][17], realized in CMOS standard technology. The active region of each 3CVHE consists of an n-well (NW) diffused into a p-doped substrate and three n + diffusions as contacts are arranged on the surface of the n-wells.…”

Section: Device Design and Tcad Simulationmentioning

confidence: 99%

“…To improve the symmetry performance of the device, four-contact and six-contact structures instead of the conventional five-contact structure have been studied [13], but they still have problems with high initial offset voltage, especially for four-contact VHDs. One of the most popular methods to reduce the offset of a fully symmetric vertical Hall device (FSVHD) is a four-folded and three contacts structure [14][15][16][17], nevertheless, its sensitivity has not been greatly improved.…”

Section: Introductionmentioning

confidence: 99%

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Sensitivity Improvement of a Fully Symmetric Vertical Hall Device Fabricated in 0.18 μm Low-Voltage CMOS Technology

Huang

2021

IEEE J. Electron Devices Soc.

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This paper proposes a new implementation method to significantly improve the magnetic sensitivity of a fully symmetric vertical Hall device (FSVHD) based on low-voltage CMOS technology. The FSVHD consists of four identical threecontact vertical Hall elements (3CVHE) and each 3CVHE is located in a low-doped deep n-well. The terminals of the 3CVHE are n + implanted in an n-well and a p + implantation in a p-well is performed to act as a trench between two adjacent n + contacts, enabling Hall current flowing deeply for sensitivity improvement. The influence of the geometry sizes on magnetic sensitivity is exploited utilizing TCAD simulation to obtain the optimized device structure in a 0.18 μm CMOS standard technology. The experimental results reveal that the proposed FSVHD with a p + /pwell trench can attain an improved voltage-related sensitivity of 8.4 mV/VT, which is about 70% higher than that of a conventional FSVHD without a trench in the same CMOS fabrication process, while offset and noise are not degraded. The proposed p + /p-well implantation trench is a good solution to enhance the sensitivity of a low-voltage CMOS VHD with a low manufacturing cost.

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Section: Device Design and Tcad Simulationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Sensitivity Improvement of a Fully Symmetric Vertical Hall Device Fabricated in 0.18 μm Low-Voltage CMOS Technology

Huang

2021

IEEE J. Electron Devices Soc.

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“…The 5CVHS is a research hotspot to improve its performance [ 13 , 14 , 15 ], and variations have been proposed to reduce the offset by a large loss of sensitivity to accommodate low-voltage CMOS technology [ 21 , 22 ]. A symmetric four-folded and three-contact VHS (4F-3CVHS) has been proposed to reduce offset [ 23 , 24 , 25 , 26 ]. 4F-3CVHS, which has four active regions connected by additional wires, effectively improves VHS performance by increasing VHS complexity.…”

Section: Introductionmentioning

confidence: 99%

A New Design of a CMOS Vertical Hall Sensor with a Low Offset

Lyu

Huang

et al. 2022

Sensors

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Vertical Hall sensors (VHSs), compatible with complementary metal oxide semiconductor (CMOS) technology, are used to detect magnetic fields in the plane of the sensor. In previous studies, their performance was limited by a large offset. This paper reports on a novel CMOS seven-contact VHS (7CVHS), which is formed by adding two additional contacts to a traditional five-contact VHS (5CVHS) to alleviate the offset. The offset voltage and offset magnetic field of the 7CVHS are reduced by 90.20% and 88.31% of those of the 5CVHS, respectively, with a 16.16% current-related sensitivity loss. Moreover, the size and positions of the contacts are optimized in standard GLOBALFOUNDRIES 0.18 μm BCDliteTM technology by scanning parameters using FEM simulations. The simulation data are analyzed in groups to study the influence of the size and contact positions on the current-related sensitivity, offset voltage, and offset magnetic field.

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“…Hall sensors, which convert an applied magnetic field into an electrical voltage or a current, have been widely used for sensing minuscule magnetic fields. Although Hall-element-based magnetic sensors can provide a high sensitivity of a few microtesla, [2][3][4][5] their sensitivity is strongly influenced by the measuring environment. Meanwhile, other research groups have developed extremely sensitive magnetic sensors with sensitivity of a few femtotesla with the use of superconducting quantum interference devices (SQUIDs) 6,7) and giant magneto resistive (GMR) elements.…”

Section: Introductionmentioning

confidence: 99%

Highly sensitive magnetic field sensor with normal-incidence geometry using Ni-based bilayer subwavelength periodic structure operating in visible-wavelength region

Takashima

Haraguchi

Naoi

2018

Jpn. J. Appl. Phys.

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We successfully demonstrate a highly sensitive optical sensor for detecting magnetic fields with normal-incidence geometry that uses a Ni-based bilayer subwavelength periodic structure (SWS) operating in the visible-wavelength region. The electromagnetic field distribution within the SWS as calculated by the finite-difference time-domain method indicates that the bilayer SWS has the potential to detect minuscule magnetic fields without the need for a complex incidence system. Our bilayer Ni-SWS system with its very simple normal incidence geometry is experimentally able to detect magnetic field changes of the order of a few millitesla.

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Compact two-dimensional CMOS Hall sensor based on switchable configurations of four three-contact elements

Cited by 8 publications

References 42 publications

Sensitivity Improvement of a Fully Symmetric Vertical Hall Device Fabricated in 0.18 μm Low-Voltage CMOS Technology

Sensitivity Improvement of a Fully Symmetric Vertical Hall Device Fabricated in 0.18 μm Low-Voltage CMOS Technology

A New Design of a CMOS Vertical Hall Sensor with a Low Offset

Highly sensitive magnetic field sensor with normal-incidence geometry using Ni-based bilayer subwavelength periodic structure operating in visible-wavelength region

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