Comparative analysis of accelerated ageing effects on power RF LDMOS reliability

Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests

“…Since the LDMOS is used in these conditions, where drain is biased through simultaneously with thermal excitation due to thermal cycling and shock (make easy the current flow), these two factors translated the correlation of thermal and electrical stresses [17].…”

A Compact Model of Mosfet Transistors Including Dispersion and Thermal Phenomena

“…For low current values, the decrease effect in mobility is negligible compared to the increase in the bearer's number and thus, the current value increases [13]. On the other side, when the current value is important (high current level), the mobility effect becomes dominant, hence resulting in a decrease in current with temperature [11] [14]. V ds [V] decreases with temperature [6].…”

Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests

“…This strong electric field causes the generation of charge states at the silicon-oxide interface [9,16]. Since the LDMOS is used in these conditions, where drain is biased with high voltage simultaneously with thermal excitation due to thermal cycling and shock (making easy the current flow), these two factors translated the correlation of thermal and electrical stresses [17]. The hot carrier degradation effect is closely related with current density and with the total number of free electrons at the silicon-oxide interface, where most of the electrons are concentrated deep inside the drift region [14,15,18].…”