Comparative analysis of STT and SOT based MRAMs for last level caches

Saha, Rajesh; Pundir, Yogendra Pratap; Pal, Pankaj Kumar

doi:10.1016/j.jmmm.2022.169161

Cited by 30 publications

(17 citation statements)

References 24 publications

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“…Endurance, the number of times the device can be switched before the failure occurs, is proportional to the ratio of time to failure to switch times. The state-of-the-art technique, [12], attempts to improve the write performance of STT-RAM memories. However, the main concern was to find a way to decrease the WER as much as possible.…”

Section: B Random Error Intensifying Write Error Ratementioning

confidence: 99%

“…The state-of-the-art technique, [12], attempts to improve the write performance of STT-RAM memories. However, the main concern was to find a way to decrease the WER as much as possible.…”

Section: B Random Error Intensifying Write Error Ratementioning

confidence: 99%

“…However, the SOT-MRAMs is 4× faster than the STT-MRAM. At the architectural level, SOT-MRAM outperforms STT-MRAM in terms of read/ write energy and latency at the cost of marginal chip-area and leakage-power [12]. In the way of STT-RAM industrial adaptation, some critical challenges should be addressed related to the write energy and write latency [7], [13]- [15].…”

Section: Introductionmentioning

confidence: 99%

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EXTENT: Enabling Approximation-Oriented Energy Efficient STT-RAM Write Circuit

et al. 2022

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Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations through thermal effectiveness. A key challenge for STT-RAM in industrial adaption is the high write energy and latency. In this paper, we overcome this challenge by exploiting the stochastic switching of STT-RAM cells and, in tandem, with circuit-level approximation. We enforce the robustness of our technique by analyzing the vulnerability of write operation against radiation-induced soft errors and applying a low-cost improvement. Due to serious reliability challenges in nanometer-scale technology, the robustness of the proposed circuit is also analyzed in the presence of CMOS and magnetic tunnel junction (MTJ) process variation. Compared to the state-of-the-art, we achieve 33.04% and 5.47% lower STT-RAM write energy and latency, respectively, with a 3.7% area overhead, for memory-centric applications.

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Section: B Random Error Intensifying Write Error Ratementioning

confidence: 99%

“…The state-of-the-art technique, [12], attempts to improve the write performance of STT-RAM memories. However, the main concern was to find a way to decrease the WER as much as possible.…”

Section: B Random Error Intensifying Write Error Ratementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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EXTENT: Enabling Approximation-Oriented Energy Efficient STT-RAM Write Circuit

et al. 2022

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“…However, the power and speed of spintronic devices is a significant impediment to their mainstream adoption in the currently used switching mechanisms, such as spin-transfer torque (STT) and spin-orbit torque (SOT). The main issues that still remain to be solved in STT switching technique are high power consumption (~130µW) and high latency (3-10ns) 4 . SOT induced switching on the other hand emerged as more promising than STT due to its high efficiency in terms of both latency (1-5ns) and power consumption (~35µW) at the cost of more area consumption 4 .…”

Section: Introductionmentioning

confidence: 99%

“…The main issues that still remain to be solved in STT switching technique are high power consumption (~130µW) and high latency (3-10ns) 4 . SOT induced switching on the other hand emerged as more promising than STT due to its high efficiency in terms of both latency (1-5ns) and power consumption (~35µW) at the cost of more area consumption 4 .…”

Section: Introductionmentioning

confidence: 99%

All-optical switching in Ho-Fe-Co nanostructures

Dikshit

Saini

Nisar

et al. 2023

Quantum Sensing and Nano Electronics and Photonics XIX

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Spintronics has attracted considerable interest for next-generation nano-devices because of their low power consumption, unlimited endurance, and non-volatility. Although spin-transfer-torque and spin-orbit-torque are widely used magnetization switching mechanisms, they are still limited by high power consumption and low switching speed. On the other hand, optically assisted magnetization switching using ultrashort laser pulses is able to achieve sub-picosecond switching operation. However, ferromagnetic materials require multiple laser pulses to switch their magnetization, that leads to higher energy consumption as compared to ferrimagnetic materials. In this paper, optically assisted magnetization dynamics in Ho-Fe-Co ferromagnetic nanostructure has been investigated using atomistic spin and monte carlo simulations. Ho has a relatively high magnetic moment and enhances magnetic anisotropy in Ho-Fe-Co nanostructure to achieve single shot and energy-efficient magnetization switching at room temperature.

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