Comparative analysis of the quantum FinFET and trigate FinFET based on modeling and simulation

Maity, N. P.; Maity, Reshmi; Maity, Santanu; Baishya, Srimanta

doi:10.1007/s10825-018-01294-z

Cited by 56 publications

(18 citation statements)

References 24 publications

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“…With increase in V G , the value of C gg increases for different t FE and this is because the device operates in strong inversion region at high value of V G. It is also visualized that device with quantum effect has lower C gg than classical case for all values of t FE . This is because quantum capacitance is connected in series with oxide and body capacitance, which leads to reduction in total C gg with quantum effect 42 . Therefore, it is realized that quantum capacitance has tremendous effect on C gg .…”

Section: Resultsmentioning

confidence: 99%

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Study on impact of ferroelectric layer thickness on RF /analog and linearity parameters in ferroelectric‐FinFET

Saha

Bhowmick

Baishya

2021

Int J RF Mic Comp-Aid Eng

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In this paper, we systematically investigated the effect of ferroelectric (FE) layer thickness (t FE ) on transfer and RF/analog characteristics such as transconductance (g m ), total gate capacitance (C gg ), cut off frequency (f t ), transconductance frequency product, and unilateral power gain in Ferroelectric-FinFET (Fe-FinFET) through 3D TCAD simulator. Further, we highlighted the influence of t FE on linearity figure of merits (FoMs), higher order harmonics (g m2 and g m3 ), voltage intercept points (VIP 2 and VIP 3 ), third order power intercept point (IIP 3 ), third order intermodulation distortion (IMD 3 ), and 1-dB compression point (1-dB comp. Pnt.) for Fe-FinFET. Moreover, the harmonic distortion (HD) parameters like second and third order harmonic distortion (HD2 and HD3) and total harmonic distortion (THD) are reported taking t FE as a parameter. The noise spectral densities of Fe-FinFET taking t FE as parameter is also highlighted. The scaling of t FE has a significant impact on RF/analog parameters and these RF/analog FoMs are a function of t FE . It is also perceived that linearity and HD parameters are dependent on scaling of t FE . Results reveal that with increase in t FE , RF/analog characteristics degrades, whereas, superior linearity FoMs is achieved. It is also seen that HD parameters are improved with increased in t FE value. The increased in t FE leads to increase in noise spectral densities. Finally, the comparative study of electrical parameters of this work with the existing literature is investigated.

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Section: Resultsmentioning

confidence: 99%

“…This is because quantum capacitance is connected in series with oxide and body capacitance, which leads to reduction in total C gg with quantum effect. 42 Therefore, it is realized that quantum capacitance has tremendous effect on C gg .…”

Section: Influence Of T Fe On DC and Rf/ Analog Performancementioning

confidence: 99%

Study on impact of ferroelectric layer thickness on RF /analog and linearity parameters in ferroelectric‐FinFET

Saha

Bhowmick

Baishya

2021

Int J RF Mic Comp-Aid Eng

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“…This is a positive, desired phenomenon, and the problem is that what is the range of Cgs and Cgd values in realistic devices. Cgs and Cgd values can be reference from literature [36][37][38][39][40][41][42][43]. The reasonable capacitance values, based on our literature review, fall into the orders of magnitude in 1×10 -8 F/m -1×10 -12 F/m.…”

Section: E Capacitance Modelmentioning

confidence: 90%

Circuit convergence study using machine learning compact models

Yang¹,

Hsu²,

Chang³

et al. 2021

Preprint

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Machine learning (ML) compact device models (CM) have emerged as an alternative to physics-based CMs. ML CMs can find a mathematical model close to the device characteristics without much prior knowledge, which saves the time of model formation. Additionally, versatile capabilities such as process-awareness, model merging, and fitting new technologies, promote the usage of ML CMs. While ML CMs draw great attention in CAD, their convergence in SPICE has not been carefully studied. Here different activation functions are used to create ML CMs, and then the circuit convergence is tested. We found that inverse square root unit (ISRU) activation has the best convergence. Besides, gate-to-source and gate-to-drain capacitance is founded to benefit the convergence in transient analysis. The circuit convergence rate is 100% for ISRU, sigmoid, and tanh when the capacitor is present. On the other hand, ISRU significantly outperforms other activation functions in DC sweep, achieving 81% convergence. If quasi-static transient analysis is employed to replace DC sweep, 100% convergence is achieved by ISRU. Due to its superior convergence, ISRU is the most promising for future ML CMs in SPICE.

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“…On the other hand, like FinFET devices, a VSTB FET can be analyzed to explore its analog/RF performance. [23][24][25][26][27][28][29] In this work, we report the influence of the bodysubstrate (B-S) junction on the overall performance of a VSTB FET. A higher doping concentration in substrate together with a lowly doped body forms a p-p + junction at the B-S interface.…”

Section: Introductionmentioning

confidence: 99%

The beneficial impact of a p–p ⁺ junction on DC and analog/radio frequency performance of a vertical super‐thin body FET

Barman

Baishya

2021

Int J RF Microw Comput Aided Eng

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This article investigates the impact of the p-p + junction (at the body-substrate interface) on different direct current (DC) and analog/radio frequency (RF) performance parameters of a newly invented structure called vertical superthin body field effect transistor (VSTB FET) through a well-calibrated TCAD tool. At a fixed body doping, the influence of p-p + junction was inspected for different substrate doping (N s ); which reveals that N s has a robust control on the device electrostatics. Interestingly, higher N s is seen to significantly suppress different short channel effects (SCEs), which in turn helps to improve various DC parameters excellently. An increase in N s from 10 15 to 10 18 cm À3 improves off-state leakage current and on-to-off current ratio by three orders of magnitude. Also, such a change in N s decreases subthreshold swing and drain-induced-barrier-lowering by 8.78 mV/dec and 11.15 mV/V, respectively. The underlying physics behind such improvement at higher N s is explored through the off-state channel electron density profiles corresponding to different N s values. Further, different analog/RF parameters such as transconductance, input capacitance, gate-drain capacitance, output conductance, gain-bandwidth-product, and transconductance frequency product (TFP) show slight improvement for increasing N s . In contrast, TGF, GFP, and GTFP offer large enhancement at higher N s . This study is expected to demonstrate the significance of N s on device performance.

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Comparative analysis of the quantum FinFET and trigate FinFET based on modeling and simulation

Cited by 56 publications

References 24 publications

Study on impact of ferroelectric layer thickness on RF /analog and linearity parameters in ferroelectric‐FinFET

Study on impact of ferroelectric layer thickness on RF /analog and linearity parameters in ferroelectric‐FinFET

Circuit convergence study using machine learning compact models

The beneficial impact of a p–p ⁺ junction on DC and analog/radio frequency performance of a vertical super‐thin body FET

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Comparative analysis of the quantum FinFET and trigate FinFET based on modeling and simulation

Cited by 56 publications

References 24 publications

Study on impact of ferroelectric layer thickness on RF /analog and linearity parameters in ferroelectric‐FinFET

Study on impact of ferroelectric layer thickness on RF /analog and linearity parameters in ferroelectric‐FinFET

Circuit convergence study using machine learning compact models

The beneficial impact of a p–p + junction on DC and analog/radio frequency performance of a vertical super‐thin body FET

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Product

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The beneficial impact of a p–p ⁺ junction on DC and analog/radio frequency performance of a vertical super‐thin body FET