2019
DOI: 10.1007/s42452-019-1778-4
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Comparative efficiency analysis for silicon, silicon carbide MOSFETs and IGBT device for DC–DC boost converter

Abstract: In present study, a comparative efficiency analysis for silicon (Si), silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) and insulated gate bipolar transistor (IGBT) device based DC-DC boost converter is performed. Due to different gate-drive characteristics of power semiconductor devices such as Si, SiC MOSFETs and IGBT device, different voltage levels are required to drive aforementioned devices. A 500 W boost converter for wide input voltage range (30-72 V) and 110 V output v… Show more

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Cited by 17 publications
(9 citation statements)
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“…The power losses of the MOSFET or the IGBT in the switching or the conduction phases, the corresponding power losses of the diode in the conduction phase, and the inductor and capacitor equivalent power losses in the DC-DC boost and buck-boost converters are evaluated in this section. The following formulas that can be used to compute the equivalent losses in these components were obtained from [40] and summarised as follows:…”
Section: Converter Lossesmentioning
confidence: 99%
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“…The power losses of the MOSFET or the IGBT in the switching or the conduction phases, the corresponding power losses of the diode in the conduction phase, and the inductor and capacitor equivalent power losses in the DC-DC boost and buck-boost converters are evaluated in this section. The following formulas that can be used to compute the equivalent losses in these components were obtained from [40] and summarised as follows:…”
Section: Converter Lossesmentioning
confidence: 99%
“…Changes in the drain current and junction temperature affect the on-resistance. The voltage drop is calculated by Equation ( 4) [40]:…”
Section: Mosfet Lossesmentioning
confidence: 99%
“…With the support of more than 600 V voltage applications, insulated gate bipolar transistors (IGBTs) have developed necessary applications. However, due to their maximum switching losses, IGBT devices have become low-efficient at high frequencies [9].…”
Section: Introductionmentioning
confidence: 99%
“…All of them can be implemented by using controlled power switch devices, like the insulated gate bipolar transistors (IGBTs) or the silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs). Anyway, they perform Impact of nearby lightning differently at different voltage levels and at different working frequency (Millan et al, 2014;Alam et al, 2019).…”
Section: Introductionmentioning
confidence: 99%