2008
DOI: 10.3952/lithjphys.48201
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Comparative investigation of recombination characteristics in proton and electron irradiated Si structures

Abstract: Comparative analysis of the carrier recombination and generation lifetime as well as reverse recovery durations (RR), dependent on electron and proton irradiation fluence, has been performed in float zone (FZ) silicon PIN diodes and wafer structures. These investigations have been devoted to determination of the dominant radiation defects and their depth distribution, to design the irradiation technology steps for PIN diodes with fast switching rates. The samples were irradiated with 2 MeV protons and 5-10 MeV… Show more

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Cited by 3 publications
(5 citation statements)
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“…Transients containing a short initial stage together with a convex shape constituent in the carrier density relaxation mid-stage and exponential asymptote indicate that carrier diffusion towards δ-layer of enhanced recombination is significant. Carrier lifetimes ascribed to the initial and asymptotic single-exponential decay components decrease with proton irradiation fluence [7].…”
Section: Resultsmentioning
confidence: 99%
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“…Transients containing a short initial stage together with a convex shape constituent in the carrier density relaxation mid-stage and exponential asymptote indicate that carrier diffusion towards δ-layer of enhanced recombination is significant. Carrier lifetimes ascribed to the initial and asymptotic single-exponential decay components decrease with proton irradiation fluence [7].…”
Section: Resultsmentioning
confidence: 99%
“…Excess carrier decays were examined by MW-PC technique [7,8]. Excess carriers were generated by a laser operating at 1062 nm wavelength with pulses of 500 ps.…”
Section: Measurement Techniques and Instrumentsmentioning
confidence: 99%
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“…Together with beneficial features the irradiations also cause the enhanced leakage currents and forward voltage drops [4]. For this reason it is important to optimize a trade-off between the dynamic and static device parameters [1,3,5].…”
Section: Introductionmentioning
confidence: 99%