The excess carrier decay kinetics, measured by microwave absorption and reflection techniques in dislocations-rich strainrelaxed SiGe layered structures, are analyzed. The simultaneous recombination and multi-trapping processes were revealed and their parameters were extracted. The recombination lifetime decreases with threading dislocations density, while multitrapping is characterized by a trapping coefficient > 10.

No abstract

The stability of the potential barrier is an essential characteristic in high energy particle detector operation under irradiation conditions. In this work a technique for barrier evaluation by linearly increasing voltage (BELIV) is presented, based on analysis of current transients measured at reverse biasing. The technique has been applied to diodes irradiated by neutrons and protons with fluences in the range of 10 12 -10 16 cm −2 in 1 MeV neutron equivalent. Fluence and temperature dependent characteristics of the diode barrier capacitance as well as of generation current are discussed.

Technique for barrier evaluation by measurements of current transients induced by linearly increasing voltage pulse based on analysis of barrier and diffusion capacitance changes is presented. The components of the barrier capacitance charging and generation/recombination currents are discussed. Different situations of the impact of deep center defects on barrier and diffusion capacitance changes are analyzed. Basics of the profiling of layered junction structures using the presented technique are discussed. Instrumentation for implementation of this technique and for investigations of the steady-state bias infra-red illumination and temperature dependent variations of the barrier capacitance charging and generation/recombination currents are described. Applications of this technique for the analysis of barrier quality in solar cells and particle detectors fabricated on silicon material are demonstrated.

A technique is presented for room temperature spectroscopy of deep levels in semiconductor devices based on measurements of current transients due to barrier capacitance charging. Spectroscopic measurements are obtained from a set of the barrier capacitance charging current transients modified by illumination pulses with wavelength between 1.5 and 10 µm. Deep levels with activation energy in the range between 0.24 and 0.56 eV have been revealed in thyristor and neutron irradiated particle detector structures by using this technique.