Fluence dependent variations of barrier charging and generation currents in neutron and proton irradiated Si particle detectors

Gaubas, E.; Čeponis, T.; Sakalauskas, S.; Uleckas, A.; Velička, Arūnas

doi:10.3952/lithjphys.51308

Cited by 16 publications

(15 citation statements)

References 9 publications

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“…1(a). The transients for a reverse biased junction are composed of barrier capacitance charging i c (t) (as the initial phase of the BELIV transient) and generation i g (t) (in the rearward stage of the transient) current components [5,8]. These components and their sum are described as…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Spectroscopy of radiation traps by temperature dependent photoconductivity and generation currents in Si

Gaubas¹,

Čeponis²,

Pavlov³

et al. 2014

Lith. J. Phys.

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An analysis of excess carrier decay transients has been performed on the reactor neutron irradiated Si n-type material grown by the magnetic field applied Czochralski (MCZ) technology, using the microwave-probed photoconductivity (MW-PC) transient technique. The measurements of temperature dependent excess carrier lifetime variations were carried out on the just irradiated and annealed samples in order to identify the prevailing radiation defects and to predict trap behaviour under thermal treatments. The activation energy of the dominant carrier traps has been extracted. Barrier capacitance and generation current variations in neutron irradiated MCZ Si pin diodes have been controlled employing the barrier evaluation by the linearly increasing voltage (BELIV) technique, as well.

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Section: Resultsmentioning

confidence: 99%

“…Barrier capacitance and generation current transient measurements are implemented by using the BE-LIV technique [5,8]. The BELIV measurement circuit consists of a sample which is connected in a series with a 50 Ω load resistor and a generator of linearly increasing voltage (LIV).…”

Section: Samples and Measurement Techniquesmentioning

confidence: 99%

Spectroscopy of radiation traps by temperature dependent photoconductivity and generation currents in Si

Gaubas¹,

Čeponis²,

Pavlov³

et al. 2014

Lith. J. Phys.

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“…The blocking junction of Cu 2 S-CdS for the majority carriers has been qualitatively tested by varying the polarity of the applied voltage and by measurements of pulsed barrier charging current transients induced by linearly increasing voltage (BELIV- [ 16 , 17 ]). The inherent shapes for the reverse biased BELIV transients ( Figure 1 ) indicate that the high resistivity layer exists in the n-type conductivity CdS.…”

Section: Resultsmentioning

confidence: 99%

“…The barrier evaluation by linearly increasing voltage (BELIV) pulsed technique [ 16 , 17 ] was applied to separate the junction structures by the controlling of free carrier densities and generation currents within the CdS base region. Three types of samples had been distinguished by using the barrier capacitance characteristics of the junctions.…”

Section: Measurement Techniques and Regimesmentioning

confidence: 99%

Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures

et al. 2012

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Cu2S-CdS junctions of the polycrystalline material layers have been examined by combining the capacitance deep level transient spectroscopy technique together with white LED light additional illumination (C-DLTS-WL) and the photo-ionization spectroscopy (PIS) implemented by the photocurrent probing. Three types of junction structures, separated by using the barrier capacitance characteristics of the junctions and correlated with XRD distinguished precipitates of the polycrystalline layers, exhibit different deep trap spectra within CdS substrates.

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“…A barrier evaluation by pulsed linearly increasing voltage (BELIV) technique [22,23] was applied to determine the temporal characteristics of the junction barrier charging and carrier generation currents within CdS junction base region. These results are discussed in more detail elsewhere [18,19], while the main features are summarized below.…”

Section: Preliminary Sorting Of the Cds Polycrystalline Structuresmentioning

confidence: 99%

Nonradiative and Radiative Recombination in CdS Polycrystalline Structures

Gaubas

Borschak

Brytavskyi

et al. 2013

Advances in Condensed Matter Physics

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Properties of polycrystalline CdS layers, employed in formation of the CdS-Cu 2 S heterostructures, have been studied by combining contactless techniques of the time and spectrally resolved photoluminescence (TR-PL) spectroscopy and microwaveprobed photoconductivity (MW-PC) transients. The confocal microscopy has been employed to correlate the homogeneity of photoluminescence and grain size in CdS layers. Three types of samples with crystallite grain size of <1 m (the I-type) and of 2-10 m of homogeneous (II-type) and inhomogeneous (III-type) grain distribution have been separated. The simultaneous record of MW-PC and TR-PL responses ensures the same sampling area on the layer under investigation, as both (MW-PC and TR-PL) signals are generated by the same UV laser excitation beam. Two PL bands peaked at 500 and 700 nm were revealed. It has been demonstrated that photoluminescence intensity strongly depends on the properties of the polycrystalline 15-26 m thick CdS layers with equilibrium carrier density of about 1.5 × 10 13 cm −3 , which serve as the substrates to form CdS-Cu 2 S junctions. The different carrier decay components were ascribed to different microareas with characteristic MW-PC and PL decay lifetimes of 2-10 ns, ascribed to microcrystallites with PL instantaneous decay lifetimes of 40-200 ns, and MW-PC decay lifetimes in the range of 100-1000 s attributed to the inter-crystallite areas of CdS polycrystalline material.

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Fluence dependent variations of barrier charging and generation currents in neutron and proton irradiated Si particle detectors

Cited by 16 publications

References 9 publications

Spectroscopy of radiation traps by temperature dependent photoconductivity and generation currents in Si

Spectroscopy of radiation traps by temperature dependent photoconductivity and generation currents in Si

Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures

Nonradiative and Radiative Recombination in CdS Polycrystalline Structures

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