Excess carrier dynamics in SiGe ultra-thin layers

Gaubas, E.; Uleckas, A.; Simoen, Eddy

doi:10.3952/lithjphys.45512

Cited by 13 publications

(37 citation statements)

References 3 publications

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“…1a. These values have been measured by combining MW-PC and DG techniques when lifetime is directly extracted from excess carrier density relaxation rate or from MW-PC amplitude decrease and using DG grating erase time dependence on grating spacing in the range of short lifetimes [1,2]. Lifetime values determined by DG and MW-PC correlate well when measured for the same fluence irradiated samples.…”

Section: Fluence and Heat Treatment Dependent Recombination Lifetime mentioning

confidence: 73%

“…• C for 5 min as well as 30 min and 24 h. Recombination characteristics have been examined by exploiting excess carrier decay transients measured by combining the microwave probed photoconductivity (MW-PC) [1] and dynamic grating (DG) [2] techniques. The fluence dependent carrier lifetime variations have been analyzed by comparing with those measured in proton irradiated high resisitivity, float-zone (FZ) grown Si material.…”

Section: Samples and Experimental Techniquesmentioning

confidence: 99%

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Investigation of Carrier Recombination in Si Heavily Irradiated by Neutrons

2008

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Variations of recombination lifetime, with fluence of the reactor neutrons from 10 12 to 3 × 10 16 n/cm 2 , in the magnetic field applied Czochralski grown Si samples are examined by the contactless transient techniques of the microwave probed photoconductivity and dynamic gratings. A nearly linear decrease in lifetime from few microseconds to about 200 ps within the examined range of neutron irradiation fluences was obtained. This dependence persists under relatively low (≤ 80• C) temperature heat treatments. Also, cross-sectional scans of lifetime depth-profiles were examined, which show rather high homogeneity of lifetime values within wafer thickness.

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Section: Fluence and Heat Treatment Dependent Recombination Lifetime mentioning

confidence: 73%

Section: Samples and Experimental Techniquesmentioning

confidence: 99%

Investigation of Carrier Recombination in Si Heavily Irradiated by Neutrons

2008

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“…Adding acetic acid to etching solution allowed us to lower the concentration of adsorbed Fe, Ni, Co, Cd ions down to 5 × 10 13 cm −2 . In addition, the porous silicon layer is known [6,7] to possess the gettering feature. Therefore, it is reasonable to predict that passivation of p−n junction by porous silicon before glass-filling procedure will improve the characteristics of diode structures.…”

Section: Resultsmentioning

confidence: 99%

Formation of Nanostructured Layers for Passivation of High Power Silicon Devices

Šalucha¹,

Šimkienė²,

Sabataityte³

2008

Acta Phys. Pol. A

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Nanocrystalline porous silicon films, which have been formed by using simple wet electrochemical etching process in HF electrolyte, were applied for passivation of high power silicon diodes. An optimal technology was designed to manufacture a uniform layer of porous silicon over the area of the p−n junction. The 8% increase in the yield was achieved on Ø100 mm diameter wafers with 69 cells of diodes in each, by using a very simple technology for the formation of porous layer for passivation of high power silicon diodes.

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“…In the asymptotic stage, the relaxation rate decreases with irradiation by x-rays and, especially, neutrons (Fig.2). The defect density dependent variations of the long-scale asymptotic decay were attributed to multi-trapping processes in as-grown material [5,7] assuming a wide spectrum of traps [8].…”

Section: Experimental Observations Of Photoluminescence and Photocondmentioning

confidence: 99%

“…Measurements of the carrier decays were performed using non-invasive microwave absorption (MWA) technique and contact photoconductivity (CPC). The MWA method is based on pump-probe technique with optical excitation and microwave absorption by the free-carriers [7]. The CPC technique relies on measuring photocurrent decays.…”

Section: +mentioning

confidence: 99%

Role of radiation defects in photoconductivity transients and photoluminescence spectra of epitaxial GaN layers

Gaubas¹,

Kazlauskas

ukauskas

2005

phys. stat. sol. (c)

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PACS 61.82.Fk, 72.40.+w, 78.55.Cr Effect of radiation defects on photoconductivity transients and photoluminescence (PL) spectra has been examined in semi-insulating GaN epitaxial layers. Manifestation of defects induced by x-ray irradiation with the dose of 600 Mrad and neutrons with the fluence of 5 × 10 14 cm -2 has been revealed through steady-state and pulsed PL as well as through contact photoconductivity (CPC) and microwave absorption (MWA) transients. Synchronous decrease in the PL intensity of yellow (Y), blue (B) and ultraviolet (UV) bands peaked at 2.19 eV, 2.85 eV and 3.42 eV, respectively, with increasing the density of radiationinduced defects was observed. The observed effect of radiation on the PL characteristics has been explained by interaction of the radiation defects with the native traps, responsible for Y-band PL or by structural modification of the "yellow" centers. The decrease in the PL intensity with concentration of radiation-induced defects is accompanied by an increase of the asymptotic decay lifetimes in time-stretched multi-trapping processes. The CPC and MWA decays, reflecting these processes, fit well a stretchedexponent approximation exp[-(t/τ) α ] with the time-stretching factor α that transforms from α = 0.7 for asgrown material to α = 0.3 for irradiated one.

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Excess carrier dynamics in SiGe ultra-thin layers

Cited by 13 publications

References 3 publications

Investigation of Carrier Recombination in Si Heavily Irradiated by Neutrons

Investigation of Carrier Recombination in Si Heavily Irradiated by Neutrons

Formation of Nanostructured Layers for Passivation of High Power Silicon Devices

Role of radiation defects in photoconductivity transients and photoluminescence spectra of epitaxial GaN layers

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