Investigation of Carrier Recombination in Si Heavily Irradiated by Neutrons

Gaubas, E.; Kadys, A.; Uleckas, A.

doi:10.12693/aphyspola.113.829

Cited by 4 publications

(4 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Moreover, the recombination lifetime values in 2.0 MeV proton-irradiated FZ n-Si wafers are considerably shorter than those obtained in samples irradiated with penetrative protons and neutrons. 95 This result proves that radiation damage is more efficient within the stopping range of protons than that achieved under irradiation with penetrative hadrons.…”

Section: Generalized Bulk Recombination Lifetime Characteristics For ...mentioning

confidence: 71%

Review—Carrier Lifetime Spectroscopy for Defect Characterization in Semiconductor Materials and Devices

Gaubas

Simoen

Vanhellemont

2016

ECS J. Solid State Sci. Technol.

Self Cite

View full text Add to dashboard Cite

A review on applications of the contact-less carrier inspection techniques for characterization of various materials is presented, based on recording of the microwave probed photo-conductivity (MW-PC) and free carrier infrared absorption (IR-FCA) transients. Comparison of characteristics measured by these techniques with data obtained by alternative methods is discussed. The models and principles of carrier lifetime description are briefly analyzed. Instrumentation and schemes for implementation of the MW-PC and IR-FCA techniques are presented. Applications of carrier lifetime measurements for material and defect characterization on different structures are illustrated.

show abstract

Section: Generalized Bulk Recombination Lifetime Characteristics For ...mentioning

confidence: 71%

Review—Carrier Lifetime Spectroscopy for Defect Characterization in Semiconductor Materials and Devices

Gaubas

Simoen

Vanhellemont

2016

ECS J. Solid State Sci. Technol.

Self Cite

View full text Add to dashboard Cite

show abstract

“…3. However, lifetime in the latter dependence is obtained to be considerably shorter than those measured after irradiation with penetrative protons and neutrons [13] of the same fluence. This result corroborates that radiation damage is more efficient within a stopping range of 2 MeV protons than that obtained under irradiation with penetrative hadrons.…”

Section: Resultsmentioning

confidence: 67%

Comparative investigation of recombination characteristics in proton and electron irradiated Si structures

Višniakov¹

2008

Lithuanian J. Phys.

View full text Add to dashboard Cite

Comparative analysis of the carrier recombination and generation lifetime as well as reverse recovery durations (RR), dependent on electron and proton irradiation fluence, has been performed in float zone (FZ) silicon PIN diodes and wafer structures. These investigations have been devoted to determination of the dominant radiation defects and their depth distribution, to design the irradiation technology steps for PIN diodes with fast switching rates. The samples were irradiated with 2 MeV protons and 5-10 MeV electrons with fluences in the range of 7·1012 -7·10 14 p/cm 2 as well as 2.4·10 12 -5.2·10 13 e/cm 2 , respectively. Carrier decay constituents and values of recombination lifetime have been evaluated by employing a microwave probed photoconductivity transient technique (MW-PC), while deep levels spectra ascribed to generation lifetime variations have been examined by exploiting capacitance deep level transient spectroscopy (C-DLTS). Recombination lifetime decreases from several microseconds to few nanoseconds in the proton irradiated Si, while DLTS spectra show an increase of the amplitude of a DLTS peak at 170 K with irradiation fluence. This peak dominates within DLTS spectra where peaks at 90, as well as at 140 and 250 K, ascribed to vacancy attributed defects, are also present. Recombination lifetime decreases from tens to few microseconds, while vacancy ascribed defects dominate in DLTS spectra under increase of irradiation fluence for the same material irradiated with electrons. Sharply inhomogeneous depth distribution of recombination lifetime in proton irradiated samples has been revealed from the cross-sectional scans of the excess carrier lifetime measured by MW-PC technique. This indicates a formation of the δ-layer of enhanced recombination in vicinity of the p + -n junction of PIN diodes. Meanwhile, the recombination lifetime is nearly constant within depth of the electron irradiated Si samples. These characteristics correlate rather well with reverse recovery time constants of the same PIN diodes.

show abstract

“…These values exhibit also a nearly linear decrease with enhancement of fluence. However, lifetime in the latter dependence is considerably shorter compared to those measured after irradiation with penetrative protons and neutrons [8] of the same fluence. This result confirms that radiation damage is more efficient within a stopping range of 2 MeV protons than that obtained under irradiation with penetrative hadrons.…”

Section: Resultsmentioning

confidence: 74%

“…Excess carrier decays were examined by MW-PC technique [7,8]. Excess carriers were generated by a laser operating at 1062 nm wavelength with pulses of 500 ps.…”

Section: Measurement Techniques and Instrumentsmentioning

confidence: 99%

Anneal-induced variations of the recombination characteristics in 2 MeV proton irradiated Si structures

Višniakov¹

2008

Lithuanian J. Phys.

View full text Add to dashboard Cite

Comparative study of the carrier recombination and generation lifetime as well as reverse recovery durations, dependent on proton irradiation fluence and annealing regimes, has been performed on FZ silicon PIN diodes and wafer structures. The samples were irradiated by 2 MeV protons with fluences in the range of 7·1012 -7·10 14 p/cm 2 . Carrier decay constituents and values of recombination lifetime have been evaluated by employing a microwave probed photoconductivity transient technique, while deep level spectra ascribed to variations of generation lifetime have been examined by exploiting capacitance deep level transient spectroscopy (DLTS). Variations of six DLTS peaks are examined under 24 h isochronal annealings in the range of temperatures from 80 to 320• C, to clarify threshold of annealing out of the specific traps. Fluence-dependent variations of the effective carrier recombination lifetime in wafer samples after isochronal annealing indicate a weak change in density of the recombination centres. The latter can be ascribed to cluster defects. Fluence-dependent variations of the reverse recovery time (RRT) in diodes after isochronal annealing imply the rearrangement of the recombination and trapping centres, probably within a space charge region (SCR) of clusters.

show abstract

Investigation of Carrier Recombination in Si Heavily Irradiated by Neutrons

Cited by 4 publications

References 4 publications

Review—Carrier Lifetime Spectroscopy for Defect Characterization in Semiconductor Materials and Devices

Review—Carrier Lifetime Spectroscopy for Defect Characterization in Semiconductor Materials and Devices

Comparative investigation of recombination characteristics in proton and electron irradiated Si structures

Anneal-induced variations of the recombination characteristics in 2 MeV proton irradiated Si structures

Contact Info

Product

Resources

About