Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration

Yang, Liping; Zhang, D.H.; Li, C.Y.; Liu, R.; Lu, Ping; Foo, P. D.; Wee, Andrew Thye Shen

doi:10.1016/j.tsf.2005.09.166

Cited by 18 publications

(8 citation statements)

References 11 publications

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“…36,37,73,75 Similar tests have also shown that a-SiC:H 59,60,64 and a-SiCN:H 44,45 can perform equivalently to a-SiN:H as Cu diffusion barriers with reduced values of dielectric permittivity as low as 4.2-4.9. 276,277 Recent studies have also indicated that dense a-SiCO:H dielectrics can also serve as Cu diffusion barriers with k values as low as 3.5. [51][52][53]55 Given that rapid Cu diffusion through SiO 2 and low-k a-SiOC:H with k values as high ∼ 2.9 have been previously reported, 273,278,279 the break point ECS Journal of Solid State Science and Technology, 4 (1) N3029-N3047 (2015)…”

Section: N3031mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

133

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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Section: N3031mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

133

115

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“…Copper has been extensively studied as a potential substitute for aluminum and aluminum alloy due to its lower bulk resistance and excellent electro-migration resistance. It is well known that copper is a faster diffuser in Si and SiO 2 , which makes diffusion barrier layer so important in Cu metallization [1][2]. Thetantalum (Ta) and tantalum nitride (TaN) [3] barrier layers have been widely used as diffusion barriers and thin film resistors in the microelectronics industry due to their good diffusion barrier properties [1,4,5] and relatively stable electrical properties [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

“…It is well known that copper is a faster diffuser in Si and SiO 2 , which makes diffusion barrier layer so important in Cu metallization [1][2]. Thetantalum (Ta) and tantalum nitride (TaN) [3] barrier layers have been widely used as diffusion barriers and thin film resistors in the microelectronics industry due to their good diffusion barrier properties [1,4,5] and relatively stable electrical properties [6][7][8]. TiN have also received much attention as diffusion barrier [9][10][11] due to its mechanical stability [9,12] and low resistivity [10,11].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characteristics of the Reactive Sputtered Ta-N Thin Films with Ti Addition

Chung¹

2018

J Nanosci Adv Tech

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The combination of TaN and TiN is expected to create a range of muti-functional materials because of the composition dependent resistivity and thermal coefficient of resistance for the applications in microelectronics and thermal sensors industry. In this article, adding Ti into the TaN thin film has been investigated by various sputtering conditions to create the possibility with varied electrical property which can be good for resistor and sensor application. A series of TaN (0Ti%) and Ta-TiN thin films were deposited by DC magnetron sputtering. The microstructure, composition, morphology and electrical properties of the films were characterized using X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy, scanning electron microscopy and four point probe method. The crystal structures of Ta, Ti and Ta-Ti alloys are based on bcc α-Ta and bcc β-Ti. XRD patterns showed TaN is qusi-amorphous structure with high N 2 flow ratio of 20% while Ta-TiN is preferred to form polycrystalline phase. The resistivity of both kinds of thin films decreases with increasing temperatures for the nature of negative temperature coefficient of resistance (N-TCR). The magnitude of both resistivity and N-TCR increases with increasing N 2 flow ratio. The wide range of resistivity and TCR can be used for applications in thermally based micro sensors (high TCR)and thin-film resistor (low TCR).

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“…8 The latter can be avoided by sealing the pores. 3 To seal pores up to 2 nm plasma treatments, [9][10][11][12][13] chemical vapor deposition (CVD) [14][15][16] and atomic layer deposition (ALD) are commonly used techniques. 17,18 However, for larger pores the existing sealing techniques are no longer efficient anymore.…”

Section: Introductionmentioning

confidence: 99%

Sealed ultra low-k organosilica films with improved electrical, mechanical and chemical properties

et al. 2013

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In this contribution, we present sealed ultra low-k organosilica films that have improved electrical, mechanical and chemical properties. The films consist of a mesoporous ethylene-bridged organosilica layer at the bottom and an almost non-porous cyclic carbon-bridged top layer. This top layer effectively seals metal penetration during atomic layer deposition processes. Furthermore, by applying this sealing approach we can lower the dielectric constant of the pristine mesoporous film from 2.5 to 2.07 while we can also lower the leakage current and improve the mechanical and chemical stability

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Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration

Cited by 18 publications

References 11 publications

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Fabrication and Characteristics of the Reactive Sputtered Ta-N Thin Films with Ti Addition

Sealed ultra low-k organosilica films with improved electrical, mechanical and chemical properties

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