Comparative Methodical Assessment of Established MOSFET Threshold Voltage Extraction Methods at 10-nm Technology Node

Swami, Yashu; Rai, Sanjeev

doi:10.4236/cs.2016.713349

Cited by 16 publications

(7 citation statements)

References 33 publications

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“…Consequently, the higher the concentration of DA, the more difficult it is to invoke a current flow through the channel and, consequently, the transfer curves shift downwards with increasing DA concentration. The gate bias that is needed to turn the transistor on is known as threshold voltage, V T , and it can be extracted from the linear region of the transfer curves as the x-axis intercept [43,44]. As reported in Fig.…”

Section: Fabrication Of the Needle-type Oectmentioning

confidence: 99%

Needle-type organic electrochemical transistor for spatially resolved detection of dopamine

et al. 2020

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In this work, the advantages of carbon nanoelectrodes (CNEs) and orgonic electrochemical transistors (OECTs) were merged to realise nanometre-sized, spearhead OECTs based on single-and double-barrel CNEs functionalised with a conducting polymer film. The needle-type OECT shows a high aspect ratio that allows its precise positioning by means of a macroscopic handle and its size is compatible with single-cell analysis. The device was characterised with respect to its electrolyte-gated behaviour and was employed as electrochemical sensor for the proof-of-concept detection of dopamine (DA) over a wide concentration range (10 −12-10 −6 M). Upon application of fixed drain and gate voltages (V d = − 0.3 V, V g = − 0.9 V, respectively), the nano-sized needle-type OECT sensor exhibited a linear response in the low pM range and from 0.002 to 7 μM DA, with a detection limit of 1 × 10 −12 M.

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Section: Fabrication Of the Needle-type Oectmentioning

confidence: 99%

Needle-type organic electrochemical transistor for spatially resolved detection of dopamine

et al. 2020

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“…These devices have strong field confinement, prominent volume conduction, and high packing density required for future CMOS scaling [2]. It is necessary to accurately model these devices for their efficient use in circuit applications [3]. Despite the fact that various studies have modelled M-G devices [4]- [6], very less research has been done on the divergence of the threshold voltage (VTH) model for Ω-G MOSFETs because of interface trapped charges 2 (ITC).…”

Section: Introductionmentioning

confidence: 99%

Proposing an ITC vandalized Threshold Voltage Divergence Model for short channel Omega Gate MOSFET using a partial 3-D Environment

Swami

2022

Preprint

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We present an interface-trapped-charge (ITC) vandalized threshold voltage (VTH) divergence model for omega-gate (Ω-G) MOSFETs using a partial 3-D scaling equation. To account the impact, the model comprises the equivalent number of gates, gate dielectric and silicon film thickness, channel limitations. The impacts of analogous oxide charges on the flat-band voltage are also examined for short-channel-free operation. A thin gate oxide is essential to prevent VTH value divergence caused by the ITC charges. The ITC vandalized device with a thick silicon sheet is altered with wee VTH value variations caused by trapped charges but rapidly increases in the thin silicon sheet device. We can reduce the VTH value by changing the value of oxide-to-gate underlap coverage factor (OUCF). Large underlap coverage factor value is desirable for positive trapped charges and small value for negative trapped charges. A damaged device with negative trapped charges performs better in short-channel conditions than one with positive trapped charges. Due to its 3-D nature, the proposed model may be efficiently used to investigate the VTH behavior and the device operating characteristics of omega-gate (Ω-G) MOSFET. It may also be competently used in device memory cell applications. Hence, the proposed model provides a deep understanding of device physics along with its computational ability, effectiveness and simplicity.

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“…ermal voltage (ϕ t ) KT/q, with K as the Boltzmann coe cient and T representing temperature in Kelvin. us, substituting E for potential gradient in (6) and multiplying both sides with e −∅/∅ t , we get…”

Section: (4)mentioning

confidence: 99%

“…Linear extrapolation method, quadratic extrapolation method, and transition method results are highly in uenced by many second-order e ects like mobility degradation, shortchannel e ects, and extrinsic resistance e ects [6,7,15]. Second derivative method, third derivative method, Ghibaudo method, reciprocal H-function method, and transconductance to current ratio method are extensively exaggerated by noise.…”

Section: A Novel Approach: Hybrid Extrapolation V Thmentioning

confidence: 99%

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Modeling, Simulation, and Analysis of Novel Threshold Voltage Definition for Nano-MOSFET

Swami¹,

Rai²

2017

Journal of Nanotechnology

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.reshold voltage (V TH ) is the indispensable vital parameter in MOSFET designing, modeling, and operation. Diverse expounds and extraction methods exist to model the on-o transition characteristics of the device. e governing gauge for e cient threshold voltage de nition and extraction method can be itemized as clarity, simplicity, precision, and stability throughout the operating conditions and technology node. e outcomes of extraction methods diverge from the exact values due to various short-channel e ects (SCEs) and nonidealities present in the device. A new approach to de ne and extract the real value of V TH of MOSFET is proposed in the manuscript. e subsequent novel enhanced SCE-independent V TH extraction method named "hybrid extrapolation V TH extraction method" (HEEM) is elaborated, modeled, and compared with few prevalent MOSFET threshold voltage extraction methods for validation of the results. All the results are veri ed by extensive 2D TCAD simulation and con rmed analytically at various technology nodes.

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Comparative Methodical Assessment of Established MOSFET Threshold Voltage Extraction Methods at 10-nm Technology Node

Cited by 16 publications

References 33 publications

Needle-type organic electrochemical transistor for spatially resolved detection of dopamine

Needle-type organic electrochemical transistor for spatially resolved detection of dopamine

Proposing an ITC vandalized Threshold Voltage Divergence Model for short channel Omega Gate MOSFET using a partial 3-D Environment

Modeling, Simulation, and Analysis of Novel Threshold Voltage Definition for Nano-MOSFET

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