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Threshold voltage (V TH) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise V TH value of the device is extracted and evaluated by several estimation techniques. However, these assessed values of V TH diverge from the exact values due to various short channel effects (SCEs) and non-idealities present in the device. Numerous prevalent V TH extraction methods are discussed. All the results are verified by extensive 2-D TCAD simulation and confirmed through analytical results at 10-nm technology node. Aim of this research paper is to explore and present a comparative study of largely applied threshold extraction methods for bulk driven nano-MOSFETs especially at 10-nm technology node along with various sub 45-nm technology nodes. Application of the threshold extraction methods to implement noise analysis is briefly presented to infer the most appropriate extraction method at nanometer technology nodes.

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.reshold voltage (V TH ) is the indispensable vital parameter in MOSFET designing, modeling, and operation. Diverse expounds and extraction methods exist to model the on-o transition characteristics of the device. e governing gauge for e cient threshold voltage de nition and extraction method can be itemized as clarity, simplicity, precision, and stability throughout the operating conditions and technology node. e outcomes of extraction methods diverge from the exact values due to various short-channel e ects (SCEs) and nonidealities present in the device. A new approach to de ne and extract the real value of V TH of MOSFET is proposed in the manuscript. e subsequent novel enhanced SCE-independent V TH extraction method named "hybrid extrapolation V TH extraction method" (HEEM) is elaborated, modeled, and compared with few prevalent MOSFET threshold voltage extraction methods for validation of the results. All the results are veri ed by extensive 2D TCAD simulation and con rmed analytically at various technology nodes.