Comparative methods for the determination of the gap state density in magnetron-sputtered hydrogenated amorphous silicon

Fernandez-Canque, Hernando Lautaro; Abdulrida, Moafak Cadim; Allison, J.

doi:10.1016/0040-6090(83)90242-0

Cited by 3 publications

(1 citation statement)

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“…Once again, at P H = 8 x 10 " 4 mbar the variation in the deposition temperature of samples shows slightly change in E 0pt . as T s increases from 360 to 523 K. Since previous studies on the material have shown that the photoconductivity and aSi:H devices such as solar cells [14], Schottky diode [15], field effect transistor [16] can be degraded by hydrogen bonded configuration at 2100 cm "' (SiH 2 and/or SiH 3 ), it is of interest to analyze the infrared spectrum results depending on the density of localized states near Fermi -level, N(E F ). We have studied the influence of variation in P H and T s at an argon pressure of 1.1 xlO" 2 mbar on the density of states near Fermi-level.…”

Section: Resultsmentioning

confidence: 98%

Optical Energy Gap of Magnetically Confined Arc Discharge D.C. Sputtered Hydrogenated Amorphous Silicon

Abdulrida¹,

Hamed²,

A.Hassan³

2004

Physics and Technology of Thin Films

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The optical energy gap of undoped hydrogenated amorphous silicon (a-Si:H) films prepared by using a magnetically confined arc discharge d.c. sputtering system has been investigated. The detail of the sputtering system used here is presented. High purity silicon polycrystalline target has been used. This work discussed experimental evidence that at different hydrogen partial pressures, during sputtering, and substrate temperature will have quite different values for the optical gap. This, results from the different values and distribution of the density of states in the mobility gap of the material. In this technique, it was found that the optimum hydrogen pressure and substrate temperature for good stability, high optical energy gap and singly hydride samples, obtained from the analysis of infrared transmission spectrum, were deposited at 8 x 10" 4 mbar and 523 K respectively. This hydrogenated amorphous silicon is useful for photovoltaic technology (i.e. solar electricity...).

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Section: Resultsmentioning

confidence: 98%