A theoretical investigation of photoluminescence spectra for amorphous silicon quantum-dots (1 - 4 nm), at room temperature, were used to study the effect of both spatial and quantum confinements spontaneously via determination the energy peak of maximum intensity transition. The results show a continuous shifting toward low energy peak (red shift) and toward high-energy peak (blue shift), with the decreasing of quantum dot size, due to spatial and quantum confinements respectively. These results have leaded us to believe that such quantum dot size (1 nm) changes the nature of amorphous silicon optical band gap from indirect to direct transition material

The characteristics of amorphous hydrongenated silicon field-effect transistors (a-Si:H FET’s) depend strongly on the partial hydrogen pressure during rf magnetron sputtering of the active material. The density of states near midgap can be reduced to around 8×1016 cm−3 eV−1, and, as a consequence, the on-off drain current ratio increases by more than four orders of magnitude at a gate voltage lower than 15 V. The performance of such FET’s, in particular their output characteristics, is found to be comparable to that of glow-discharge produced devices.

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A significant influence of temperature width found on the vanadium oxide properties, it plays a major role in highlighting the thermal limits of the three phases (metallic, semiconductor, and dielectric). Two values of the temperature width , and , had taken and studied their effect on both the dielectric constant and its two parts; refractive index, and extinction coefficient, and. It found that: as the temperature width is greater, the more the properties of the three phases for . In addition to increasing the thermal range for phases which can be reached to when , while it's at . Our results have achieved great compatibility with the published results globally. In addition to the effect of both ultraviolet, visible, and infrared radiation on vanadium oxide, according to the different phases of the metal, semiconductor, and dielectric, where the behavior of any of them differs according to the effect of the radiation affecting it. It is noted that the behavior is almost identical to both the extinction coefficient, and refractive at the visible region, on the contrary other two regions where the behavior of the three phases is evident in it.

A numerical computation for determination transmission coefficient and resonant tunneling energies of multibarriers heterostructure has been investigated. Also, we have considered GaN/Al0.3Ga0.7N superlattice system to estimate the probability of resonance at specific energy values, which are less than the potential barrier height. The transmission coefficient is determined by using the transfer matrix method and accordingly the resonant energies are obtained from the T(E) relation. The effects of both well width and number of barriers (N) are observed and discussed. The numbers of resonant tunneling peaks are generally increasing and they become sharper with the increasing of N. The resonant tunneling levels are shifted inside the well by increasing the well width and vice versa. These features and the transmission coefficient as a function of incident energetic particles play an important role in fabrication of high speed devices and a good factor for determination the peak-to-valley ratio of resonant tunneling devices respectively.