Comparative numerical study of the effects of rotating and travelling magnetic fields on the interface shape and thermal stress in the VGF growth of InP crystals

Schwesig, P.; Hainke, Marc; Friеdrich, J.; Mueller, Gerhard O. W.

doi:10.1016/j.jcrysgro.2004.02.049

Cited by 49 publications

(51 citation statements)

References 8 publications

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“…Such an evaluation of the various force expressions is of obvious interest since the different force descriptions are in growing use for the analysis of TMF flows [2][3][4][5][7][8][9][10]. numerical one for the two values S ¼ 0:5 and 5 of the shielding parameter.…”

Section: Numerical Simulationmentioning

confidence: 99%

“…Applying the TMF to the vertical gradient freeze (VGF) growth of semiconductor single crystals, the heat and mass transport in the melt can be tailored for a growth under optimized flow conditions to improve crystal properties and/or growth yield. Consequently, the application of a TMF has recently found growing interest in crystal growth processes [1][2][3][4]. The beneficial effect of an adequately adjusted TMF-induced flow was demonstrated, e.g., in Ref.…”

Section: Introductionmentioning

confidence: 99%

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Numerical and experimental modeling of the melt flow in a traveling magnetic field for vertical gradient freeze crystal growth

Galindo

Grants

Lantzsch

et al. 2007

Journal of Crystal Growth

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Section: Numerical Simulationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Numerical and experimental modeling of the melt flow in a traveling magnetic field for vertical gradient freeze crystal growth

Galindo

Grants

Lantzsch

et al. 2007

Journal of Crystal Growth

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“…Schwesig et al [8] compared numerically the effects of rotating and traveling magnetic fields on interface shape and thermal stress in the VGF growth of 2 00 InP crystals. Time-dependent magnetic fields have shown to be very promising for flow control in semiconductor melts, as they can be used to actively force melt flow into desired directions with relatively low magnetic fields compared to the use of stationary magnetic fields, where the influence on the flow is only a passive one.…”

Section: Optimization Of Inp Vgf Growth By Timedependent Magnetic Fieldsmentioning

confidence: 99%

“…5). Schwesig et al [8] have shown that with a TMF, the process can be optimized towards either an almost flat interface or a minimization of the von-Mises stress at the interface.…”

Section: Optimization Of Inp Vgf Growth By Timedependent Magnetic Fieldsmentioning

confidence: 99%

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Modeling of industrial bulk crystal growth—state of the art and challenges

Fischer¹,

Friеdrich²,

Jung³

et al. 2005

Journal of Crystal Growth

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Crystal Growth

Brice

Rudolph

2007

Ullmann's Encyclopedia of Industrial Chemistry

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The article contains sections titled: 1. Introduction 1.1. Historical Aspects 1.2. Uses of Single Crystals 1.3. Specification of Crystals 1.4. Commercial Aspects 1.5. Sources of Information 2. Thermodynamic Aspects 2.1. Free Energy and Driving Force of Crystallization 2.2. Phase Relations for Major Components 2.3. Phase Relations for Minor Components 2.4. Interfacial Effects 2.5. Shortcomings of the Thermodynamic Approach 3. Growth Kinetics 3.1. Atomic Structure of Growing Interfaces 3.2. Rough Faces 3.3. Perfect Singular Faces 3.4. Imperfect Singular Faces 4. Transport Effects 4.1. Transport Processes 4.2. Boundary Layers 4.3. Mass Flow of Major Components 4.4. Mass Flow of Minor Components 4.5. Heat Flow 4.6. Interface Stability 5. Practical Considerations 5.1. Raw Materials 5.2. Temperature Control 5.3. Containers and Atmospheres 5.4. Selection and Optimization of Methods 5.5. Characterization 6. Melt Growth Techniques 6.1. Crystal Pulling 6.2. Bridgman Method 6.3. Skull Melting Methods 6.4. Zone Melting 6.5. Verneuil Process 7. Solution Growth Techniques 7.1. General Aspects 7.2. Low‐Temperature Methods 7.3. High‐Temperature Methods 7.4. Liquid‐Phase Epitaxy 7.5. Electrolytic Methods 7.6. Hydrothermal Growth 8. Vapor Growth Techniques 8.1. Sublimation and Evaporation Methods 8.2. Molecular Beam Epitaxy 8.3. Chemical Vapor Transport 8.4. Vapor‐Liquid‐Solid Growth 9. Solid‐Phase Growth Techniques 9.1. Strain ‐ Anneal Method 9.2. Methods Not Involving Applied Strain 9.3. Solid‐Phase Epitaxy 9.4. Gel Growth 10. Trends This article summarizes the theory and practice of the growth of single crystals. Today, the growth of crystals having dimensions of some hundred millimeters in diameter and weights over 200 kg under extreme pure conditions is well‐matured in industrial scale. The major user of the crystals is the electronics industry. Growth of crystals demands theoretical knowledge of thermodynamics, kinetics, and transport processes. In practice, some general aspects have to be considered, including choice of raw materials, conditions, methods, and characterization. The industrial and laboratory techniques of crystal growth are discussed. Economical aspects dominate the developments in the future, that is, growing of larger crystals at higher quality to raise yields and device performance. Furthermore, the demand for tighter specifications and increasing range of materials and uses will require more sophisticated methods and an extensive use of automation.

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Comparative numerical study of the effects of rotating and travelling magnetic fields on the interface shape and thermal stress in the VGF growth of InP crystals

Cited by 49 publications

References 8 publications

Numerical and experimental modeling of the melt flow in a traveling magnetic field for vertical gradient freeze crystal growth

Numerical and experimental modeling of the melt flow in a traveling magnetic field for vertical gradient freeze crystal growth

Modeling of industrial bulk crystal growth—state of the art and challenges

Crystal Growth

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