Comparative optical study of thulium-dopedYVO4,GdVO

Spectroscopic properties of a Tm3+:Bi2TeO5 single crystal

“…(1). The obtained values are: P X = 4.7 × 10 −6 , P Y = 6.8 × 10 −6 and P Z = 5.9 × 10 −6 that gives a mean value P mean = (P X + P Y + P Z ) / 3 = 5.8 × 10 ), and are comparable with the values characterising the Tm:Y(Gd)VO 4 crystals [15]. Therefore, the Tm:BTO seems to be a promising material for laser generation near 2 µm ( 3 F 4 → 3 H 6 ) and 1.…”

“…Therefore, the 3 F 4 radiative lifetime, defined as τ rad = 1/A rad , was estimated to be 1497 µs. This value is nearly twice lower than that reported for Tm:YVO 4 [15] [14]. In material under study the 3 H 4 lifetime is a relatively short and amounts to 14 µs at both 5 and 300 K. Luminescence decays are found to be single exponential.…”

Actively Q-switched Thulium Lasers

“…Intensive research has been devoted to thulium doped gain media (see e.g. (Huber et al,1988) (Payne et al, 1992) (Lisiecki et al,2006)) and methods of Q-switching. Passive Q-switching by means of holmium or chromium doped saturable absorbers as well as special types of quantum dots structures (Gaponenko et al, 2008) were examined, however simple, active Q-switching by means of acousto-optic modulators seems to be the better choice because of matured technology, very low insertion losses and relatively high damage thresholds.…”

High repetition rate, tunable, Q-switched diode pumped Tm:YLF laser

“…Moreover, the same pumping diodes operat− ing near 0.8−μm wavelength can be used because of wide absorption bandwidth of Tm doped crystals. However, these advantages are balanced out by the considerable drawbacks, namely the high level of temperature−dependent reabsorp− tion losses as a result of quasi−three−level scheme [44][45][46], complicated nature of line broadening and structure of emission bandwidth [8,[47][48][49][50].…”