Comparative Sb and As segregation at the InP on GaAsSb interface

Wallart, X.; Godey, S.; Douvry, Y.; Desplanque, L.

doi:10.1063/1.2991299

Cited by 10 publications

(6 citation statements)

References 15 publications

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“…This suggests that Sb diffuses to the surface during As-decapping procedure which is most likely due to the binding energy difference between GaAs and GaSb binary systems. 27 In the case of GaAsSb, GaAs binary system has higher binding energy than GaSb, which results in a lower kinetic barrier to Sb segregation. 28 Since we showed that the Sb capping layer produces a chemically clean starting surface compared to As capping, we use this to investigate the interfacial chemistry of Al 2 O 3 ALD directly on the Sb-decapped surface.…”

Section: Resultsmentioning

confidence: 99%

Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al2O3 on GaSb(100)

Zhernokletov¹,

Dong²,

Brennan³

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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In-situ monochromatic x-ray photoelectron spectroscopy, low energy electron diffraction, ion scattering spectroscopy, and transmission electron microscopy are used to examine the GaSb(100) surfaces grown by molecular beam epitaxy after thermal desorption of a protective As or Sb layer and subsequent atomic layer deposition (ALD) of Al2O3. An antimony protective layer is found to be more favorable compared to an arsenic capping layer as it prevents As alloys from forming with the GaSb substrate. The evolution of oxide free GaSb/Al2O3 interface is investigated by “half-cycle” ALD reactions of trimethyl aluminum and deionized water.

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Section: Resultsmentioning

confidence: 99%

Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al2O3 on GaSb(100)

Zhernokletov¹,

Dong²,

Brennan³

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…As evidenced by EDX data some intermixing occurs in the InAs top layer. Sb segregation is a well-known phenomenon [42], probably enhanced in our growth conditions using a relatively low growth rate. Ga segregation/ interdiffusion in InAs is less expected and further work is needed to clarify this point.…”

Section: Nanostructure Strain Relaxationmentioning

confidence: 87%

Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievement

et al. 2016

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The growth of in-plane GaSb nanotemplates on a GaAs (001) substrate is demonstrated combining nanoscale patterning of the substrate and selective area heteroepitaxy. The selective growth of GaSb inside nano-stripe openings in a SiO mask layer is achieved at low temperature thanks to the use of an atomic hydrogen flux during the molecular beam epitaxy. These growth conditions promote the spreading of GaSb inside the apertures and lattice mismatch accommodation via the formation of a regular array of misfit dislocations at the interface between GaSb and GaAs. We highlight the impact of the nano-stripe orientation as well as the role of the Sb/Ga flux ratio on the strain relaxation of GaSb along the [110] direction and on the nanowire length along the [1-10] one. Finally we demonstrate how these GaSb nanotemplates can be used as pedestals for subsequent growth of in-plane InAs nanowires.

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“…One is the slight incorporation of Sb in the InP emitter. This is probably due to Sb (surface) segregation [24][25][26][27] and memory effects. An appropriate growth interval process in an As-rich atmosphere before the growth of InP 24,25) and=or the insertion of a GaAs interlayer 28) between the base and the InP emitter might be effective for suppressing this segregation.…”

Section: Sims Analysis and Contact Resistivity Of Compositionally-gra...mentioning

confidence: 99%

Composition and doping control for metal–organic chemical vapor deposition of InP-based double heterojunction bipolar transistor with hybrid base structure consisting of GaAsSb contact and InGaAsSb graded layers

Hoshi

Kashio

Sugiyama

et al. 2017

Jpn. J. Appl. Phys.

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We report on a method for composition and doping control for metalorganic chemical vapor deposition of a double heterojunction bipolar transistor (DHBT) with a hybrid base structure consisting of a compositionally graded InGaAsSb for boosting an average electron velocity and a heavily doped thin GaAsSb for lowering the base contact resistivity. The GaAsSb contact layer can be formed by simply turning off the supply of In precursor tetramethylindium (TMIn) after the growth of the composition and doping graded InGaAsSb base. Consequently, the solid composition and hole concentration of hybrid base can be properly controlled by just modulating the supply of only TMIn and carbon tetrabromide. Secondary ion mass spectroscopy for the DHBT wafer reveals that the contents of In, Ga, and C inside the base are actually modulated from the collector side to the emitter side as expected. Transmission-line-model measurements were performed for the compositionally graded-InGaAsSb/GaAsSb hybrid base. The contact resistivity is estimated to be 5.3 Ω µm2, which is lower than half the value of a compositionally graded InGaAsSb base without the GaAsSb contact layer. The results indicate that the compositionally-graded-InGaAsSb/GaAsSb-contact hybrid base structure grown by this simple method is very advantageous for obtaining DHBTs with a very high maximum oscillation frequency.

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Comparative Sb and As segregation at the InP on GaAsSb interface

Cited by 10 publications

References 15 publications

Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al2O3 on GaSb(100)

Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al2O3 on GaSb(100)

Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievement

Composition and doping control for metal–organic chemical vapor deposition of InP-based double heterojunction bipolar transistor with hybrid base structure consisting of GaAsSb contact and InGaAsSb graded layers

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