The interfacial reactions between atomic layer deposited Al 2 O 3 films on various chemically treated InP(100) surfaces have been investigated by in situ X-ray photoelectron spectroscopy at each half cycle in the deposition process. With the first cycle of trimethyl aluminum, a significant decrease in the amount of indium oxides present on the surface is seen, consistent with the ''clean up'' effect reported for other III-V semiconductor surfaces. However, a concurrent increase in the amount of phosphorous oxide is seen, suggesting oxygen transfer from indium oxides to phosphorous during indium oxide decomposition. #

We have grown epitaxial strained LaCoO3 on (100)-oriented silicon by molecular beam epitaxy using a relaxed epitaxial SrTiO3 buffer layer. Superconducting quantum interference device magnetization measurements show that, unlike the bulk material, the ground state of the strained LaCoO3 on silicon is ferromagnetic with a TC of 85 K. First principles calculations suggest that a ferromagnetic ground state can be stabilized in LaCoO3 by a sufficiently large biaxial tensile strain with the transition accompanied by a partial untilting of the CoO6 octahedra.

Evidence of indium diffusion through high-k dielectric (Al2O3 and HfO2) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a POx rich interface.

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The interface trap density (Dit) and bonding at the Al2O3/InP interface was investigated using capacitance-voltage (C-V) measurements and X-ray photoelectron spectroscopy (XPS). The Dit extracted using C-V measurements show a peak near midgap and a tail, which extends into the InP conduction band. After post high-k deposition annealing, only midgap Dit increases while minimal change in conduction band Dit is observed. The magnitude of extracted Dit is higher for the Al2O3/InP interface compared to the HfO2/InP interface. XPS analysis shows that the native oxides at the Al2O3/InP interface are more phosphorous rich than for HfO2/InP interface.