Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors

Abstract

Articles you may be interested inEffect of atomic layer deposition growth temperature on the interfacial characteristics of HfO2/p-GaAs metaloxide-semiconductor capacitors Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors Appl. Phys. Lett. 102, 132903 (2013); 10.1063/1.4799660 Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates Appl. Phys. Lett. 100, 132905 (2012); 10.1063/1.3698094 The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layerdeposition Al 2 O 3 / n-In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitor Appl. Phys. Lett. 97, 042903 (2010); 10.1063/1.3467813Electrical characteristics of metal-oxide-semiconductor capacitors on p -GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates

“…The border trap model is common for traditional III-V MOS system using GaAs, InP, and InGaAs. [35][36][37][38] In those cases, remarkable frequency dispersion at accumulation bias in the experimental C-V curves is the most characteristic feature for the border trap model. [35][36][37][38] Border traps have long time constants as they interact with the conduction band electrons via tunneling, leading to large frequency dispersion even at accumulation bias.…”

In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP

“…4 It is well known that the density of interface states (D it ) of III-V semiconductors are strongly correlated to the native oxides, 5 and In-P-oxides have been correlated to D it for high-k/InP system. 6 Therefore, it is desirable to decrease the native oxide concentration on the InP surface in order to improve electrical performance. 7 One of the advantages of high-k dielectrics grown by atomic layer deposition (ALD) on III-V substrates is the "self cleaning" effect, 7 in which the native oxides are converted by the first pulse of metal precursor during ALD.…”

In situstudy of atomic layer deposition Al2O3on GaP (100)

“…3,4 The interface quality of high-k/InP influences the electrical performance, such as the sub-threshold swing. 5 A recent report has correlated the indium and phosphorus oxides at the interface with a significant density of interface states (D it ), 6 which have the potential to degrade the electrical performance. In situ studies of the interfacial chemistry of atomic layer deposition (ALD) of Al 2 O 3 and HfO 2 on InP have been reported.…”

“…The presence of interfacial P-oxides have been correlated with an increased interface trap density in the high-k/InP system. 6,30 Therefore, an improved cleaning and passivation process prior to ALD is required to avoid P-oxide formation during the ALD process and obtain a high quality high-k/ GaP interface. Figure 3 shows the Al 2p and S 2s spectra for the S-passivated samples, after annealing in the ALD reactor, and after each precursor exposure during the initial ALD stages.…”