Comparative Studies on Temperature-Dependent Characteristics of Passivated In[sub 0.2]Ga[sub 0.8]AsSb∕GaAs High-Electron-Mobility Transistors

Lee, Ching-Sung

doi:10.1149/1.3031596

Cited by 4 publications

(3 citation statements)

References 26 publications

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“…It was reported that sulfur treatment is very effective in reducing the surface states and surface recombination velocity in III-V compound semiconductors. [7][8][9][10][11][12] Of the various sulfur treatments, only the ͑NH 4 ͒ 2 S x treatment achieved promising results due to its capacity to etch the native oxide and the GaAs surface and to tie up the dangling bonds with sulfur on a freshly exposed prismatic GaAs surface. Although increasing immersion time promotes the performance, longer immersion time causes a higher surface roughness and a decline in the mobility of electrons by high sulfide contamination and chemical reaction.…”

mentioning

confidence: 99%

Effective Treatment on AlGaN/GaN MSM-2DEG Varactor with (NH[sub 4])[sub 2]S/P[sub 2]S[sub 5] Solution

Ferng

Chang

Das

et al. 2010

Electrochem. Solid-State Lett.

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The effect of surface passivation using ͑NH 4 ͒ 2 S and ͑NH 4 ͒ 2 S/P 2 S 5 on a AlGaN/GaN-based metal-semiconductor-metal diode above a two-dimensional electron gas ͑MSM-2DEG͒ varactor was investigated. The surface property, capacitance ratio ͑C max /C min ͒, and leakage current of the prepared samples were studied before and after treatments using X-ray photoelectron spectroscopy and capacitance-voltage and current-voltage analyses. It showed that the ͑NH 4 ͒ 2 S/P 2 S 5 -treated sample had the most excellent surface state and C max /C min and the least leakage current because of either reduced native oxide or deposited phosphorus compounds only provided by ͑NH 4 ͒ 2 S/P 2 S 5 and sulfide upon the surface, also validated by having the highest sheet carrier density. Hence, these promising results promote further potential for varactor applications.The metal-semiconductor-metal diode above a two-dimensional electron gas ͑MSM-2DEG͒ has shown its potential as a varactor that can be easily integrated with high electron mobility transistor devices. In addition, its voltage-dependent capacitance ratio is much larger than that of conventional varactor diodes and can be tuned by electrode geometry in contrast to the conventional p-n, Schottky, or heterostructure diodes where the ratio is only defined by the layer structure. 1-3 After the development of SiO 2 /AlGaN/GaN-based double metal-oxide-semiconductor heterojunction capacitors with reduced leakage current, the MSM-2DEG based on this layer structure was proposed as a robust radio-frequency switch. 4 Most of these applications seek the large capacitance ratio. However, except by tuning the electrode geometry, few investigations on the improvement of capacitance ratio obtaining the superior varactor performance are published. 5,6 Marso et al. 5 reported that metal-oxidesemiconductor heterojunction field effect transistor ͑MOSHFET͒ MSM with an oxide layer between the metal and the semiconductor decreased the C max and made the capacitance-voltage ͑C-V͒ characteristic asymmetric even though it could reduce the leakage current. Besides, they also indicated that better controllable capacitance ratio and stable C-V properties could be obtained in the heterostructure field effect transistor ͑HFET͒ MSM without an oxide layer between the metal and the semiconductor, but it was with a worse leakage current. It was reported that sulfur treatment is very effective in reducing the surface states and surface recombination velocity in III-V compound semiconductors. 7-12 Of the various sulfur treatments, only the ͑NH 4 ͒ 2 S x treatment achieved promising results due to its capacity to etch the native oxide and the GaAs surface and to tie up the dangling bonds with sulfur on a freshly exposed prismatic GaAs surface. Although increasing immersion time promotes the performance, longer immersion time causes a higher surface roughness and a decline in the mobility of electrons by high sulfide contamination and chemical reaction. Hence, hot ͑NH 4 ͒ 2 S x treatment or ͑NH 4 ͒ 2 S x + UV ...

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mentioning

confidence: 99%

Effective Treatment on AlGaN/GaN MSM-2DEG Varactor with (NH[sub 4])[sub 2]S/P[sub 2]S[sub 5] Solution

Ferng

Chang

Das

et al. 2010

Electrochem. Solid-State Lett.

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“…Clearly, V on and I G decrease and increase, respectively, as the temperature is increased due to the reduction of energy gap and enhanced tunneling mechanism with thermionic emission. 19 The increase of I G also degrades V on characteristic at high temperature. However, as compared with TE-gate device and other previous works of AlGaN/GaN HEMTs, 4 the studied EP-gate device shows higher turn-on voltage, lower gate leakage, and lower temperature variation rates at higher temperature ambiances.…”

Section: Resultsmentioning

confidence: 99%

Characteristics of a Pd/AlGaN/GaN Transistor Processed Using the Sensitization, Activation, and Electroless Plating (EP) Approaches

Huang

Chen

et al. 2012

J. Electrochem. Soc.

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The characteristics of a Pd/AlGaN/GaN high electron mobility transistor (HEMT) processed using the sensitization, activation, and electroless plating (EP) deposition approach are studied and demonstrated. A dense and uniform Pd seed layer is achieved by using the additional sensitization and activation processes. Therefore, the superior characteristics in turn-on voltage (1.79 V), gate leakage current (9 nA), maximum extrinsic transconductance (95.8 mS/mm), and maximum drain saturation current (373.8 mA/mm) are obtained for a 1 μm gate HEMT at 300 K. As increasing the temperature from 300 to 600 K, the reduced variation and degradation rates are also found for the studied EP-gate device. Furthermore, superior hydrogen gas sensing performance, including large drain current change (34.1 mA/mm) and high sensing response (3469%), is observed under 1% H 2 /air ambience. Consequently, the studied EP-gate AlGaN/GaN HEMT shows the promise for high-performance electronic device and hydrogen sensor applications.

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“…In order to enhance the Schottky barrier height, depositing gate metals of high work function on wide-gap barrier layer has been attempted [10]. Other approaches using SiN [11][12] or sulfide [13][14] surface passivation techniques have also been studied. Besides, gate engineering technologies based on metal-insulator-semiconductor (MIS) or MOS structures have been studied by using atomic-layer-deposited (ALD) gate dielectrics [15], molecular beam epitaxy (MBE) deposited dielectrics [16], or InAlP oxides [17] to reduce the gate leakages.…”

Section: Introductionmentioning

confidence: 99%

Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique

Lee¹,

Hung²,

Chou³

et al. 2012

Semicond. Sci. Technol.

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Al 0.22 Ga 0.78 As/In 0.24 Ga 0.76 As pseudomorphic high-electron-mobility transistors (pHEMTs) with metal-oxide-semiconductor (MOS)-gate structure or oxide passivation by using ozone water oxidation treatment have been comprehensively investigated. Annihilated surface states, enhanced gate insulating property and improved device gain have been achieved by the devised MOS-gate structure and oxide passivation. The present MOS-gated or oxide-passivated pHEMTs have demonstrated superior device performances, including superior breakdown, device gain, noise figure, high-frequency characteristics and power performance. Temperature-dependent device characteristics of the present designs at 300-450 K are also studied.

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Comparative Studies on Temperature-Dependent Characteristics of Passivated In[sub 0.2]Ga[sub 0.8]AsSb∕GaAs High-Electron-Mobility Transistors

Cited by 4 publications

References 26 publications

Effective Treatment on AlGaN/GaN MSM-2DEG Varactor with (NH[sub 4])[sub 2]S/P[sub 2]S[sub 5] Solution

Effective Treatment on AlGaN/GaN MSM-2DEG Varactor with (NH[sub 4])[sub 2]S/P[sub 2]S[sub 5] Solution

Characteristics of a Pd/AlGaN/GaN Transistor Processed Using the Sensitization, Activation, and Electroless Plating (EP) Approaches

Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique

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