Comparative study of bi-layer attenuating phase-shifting masks for hyper-NA lithography

Abstract

Most IC manufacturers are considering MoSi to be the material of conventional 6% attenuating phase-shifting masks (attPSM) in hyper-NA lithography (50 nm half pitch node and smaller). However, simulation results show that Cr-based binary-intensity mask (BIM) outperforms the attPSM at dense lines and spaces (LS) patterns in hyper-NA lithography. A reason lies in the transmitted polarization state through the mask. The attPSM is found to be a transverse-magnetic polarizer for hyper-NA imaging, while the BIM acts as a transverse-electric polarizer, which is beneficial for imaging. Using a metal-based absorber of the attPSM has potential for improving the degree of polarization of transmitted light. In our previous work absorber thickness of bi-layer attPSM, i.e. Ta/SiO 2 , was optimized through three-dimensional electromagnetic field (3D-EMF) simulations for better imaging performance than the MoSi attPSM.In this study, the thickness-optimized Ta/SiO 2 attPSM was fabricated to compare the imaging performance with the standard Ta/SiO 2 and MoSi attPSMs with 6% transmission and 180 o phase shift. The thickness-optimized Ta/SiO 2 attPSM has 1% transmission due to 50% thicker Ta than the standard, while the 180 o phase shift is controlled by SiO 2 thickness. The exposure latitude of 45 nm LS delineated by using an NA1.20 full-field scanner with xy-polarized cquadrupole was 15.7%, 13.4%, and 10.1% with depth of focus of 200 nm for the optimized Ta/SiO 2 , the standard Ta/SiO 2 , and MoSi, respectively. Line width roughness of the Ta/SiO 2 attPSMs was approximately 5.5 nm for the 45 nm LS, which was comparable to MoSi. Mask-error-enhancement factor (MEEF) of the 45 nm LS was 4.4, 4.9, and 3.8 for the optimized Ta/SiO 2 , the standard Ta/SiO 2 , and MoSi, though the simulation expected MEEF values of 4.1, 5.5, and 6.3, respectively. Because the transmission and the phase shift measured by normal incidence are not linked directly with the imaging performance in the hyper-NA lithography with off-axis illumination, the mask materials and structures need to be optimized by using 3D-EMF simulators for the better imaging quality.

Optimization of mask absorber stacks and illumination settings for contact hole imaging

“…Nevertheless the exploration of a wider n and k parameter space is very useful to guide future material research. Three different options are used for the specification of the absorber material of the AttPSM or binary mask, respectively: • stack-list: A list of fixed absorber stacks which includes a standard binary chromium/chromium oxide stack (NTAR7), a standard AttPSM-stack (MoSi), and two different alternative AttPSM stacks which were recently proposed by Yoshizawa [13]: Cr/SiON and Ta/SiO 2 .…”

Feasibility study of embedded binary masks

“…[5] We will discuss in more detail the imaging performance through-pitch of the EBM based on rigorous simulations.…”

The MEEF NILS divergence for low k1 lithography

“…Several recent publications characterize low k1 patterning of various mask stack and materials [1][2][3][4][5] and in at least some cases 6 simultaneously considered the effect of biasing. Those works generally evaluate contrast, NILS or exposure latitude (all three are proportional to each other) for one-dimensional features as the initial metric for comparison between different mask stacks.…”