Comparative Study of Cu-Precursors for 3D Focused Electron Beam Induced Deposition

Luisier, A.; Utke, Ivo; Bret, T.; Cicoira, Fabio; Hauert, Roland; Rhee, Shi‐Woo; Doppelt, P.; Hoffmann, P.

doi:10.1149/1.1779335

Cited by 20 publications

(21 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…With respect to the stoichiometric copper content in the Cu(hfac) 2 precursor of 3.7 atom % (disregarding the hydrogen) this was 2.7 times more copper in the deposit. The Cu content in deposits obtained from the (hfac)Cu(I)VTMS and (hfac)Cu(I)DMB precursors was about twice as high [ 41 ].…”

Section: Resultsmentioning

confidence: 99%

“…In this study bis(hexafluoroacetylacetonato)copper(II) [Cu(hfac) 2 , Cu(HC 5 O 2 F 6 ) 2 ] was used as a precursor and compared to earlier experiments with the precursors vinyltrimethylsilane copper(I) hexafluoroacetylacetonate, [(hfac)CuVTMS, (C 6 H 12 Si)Cu(HC 5 O 2 F 6 )], and dimethylbutene copper(I) hexafluoroacetylacetonate [(hfac)CuDMB, (C 5 H 12 )Cu(HC 5 O 2 F 6 )] [ 41 ].…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

Szkudlarek¹,

Vaz²,

Zhang³

et al. 2015

Beilstein J. Nanotechnol.

View full text Add to dashboard Cite

SummaryIn this paper we study in detail the post-growth annealing of a copper-containing material deposited with focused electron beam induced deposition (FEBID). The organometallic precursor Cu(II)(hfac)2 was used for deposition and the results were compared to that of compared to earlier experiments with (hfac)Cu(I)(VTMS) and (hfac)Cu(I)(DMB). Transmission electron microscopy revealed the deposition of amorphous material from Cu(II)(hfac)2. In contrast, as-deposited material from (hfac)Cu(I)(VTMS) and (hfac)Cu(I)(DMB) was nano-composite with Cu nanocrystals dispersed in a carbonaceous matrix. After annealing at around 150–200 °C all deposits showed the formation of pure Cu nanocrystals at the outer surface of the initial deposit due to the migration of Cu atoms from the carbonaceous matrix containing the elements carbon, oxygen, and fluorine. Post-irradiation of deposits with 200 keV electrons in a transmission electron microscope favored the formation of Cu nanocrystals within the carbonaceous matrix of freestanding rods and suppressed the formation on their surface. Electrical four-point measurements on FEBID lines from Cu(hfac)2 showed five orders of magnitude improvement in conductivity when being annealed conventionally and by laser-induced heating in the scanning electron microscope chamber.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

Szkudlarek¹,

Vaz²,

Zhang³

et al. 2015

Beilstein J. Nanotechnol.

View full text Add to dashboard Cite

show abstract

“…• C, Cu from Cu-DMBhfac [22], Fe from Fe(CO) 5 in a UHV set-up [46], Ga from D 2 GaN 3 [25], Ge from Ge 2 H 6 [26], Ir from [IrCl(PF 3 ) 2 ] 2 [27], Mn from MnMeCp(CO) 3 [28], Mo from Mo(CO) 6 [29], Ni from Ni(PF 3 ) 4 [30], Os from Os 3 (CO) 12 [31], Pb from Pb(CH 3 ) 4 , Pd from Pd(ac) with annealing to 250…”

Section: Introductionmentioning

confidence: 99%

Creating pure nanostructures from electron-beam-induced deposition using purification techniques: a technology perspective

Mulders²,

2009

View full text Add to dashboard Cite

The creation of functional nanostructures by electron-beam-induced deposition (EBID) is becoming more widespread. The benefits of the technology include fast 'point-and-shoot' creation of three-dimensional nanostructures at predefined locations directly within a scanning electron microscope. One significant drawback to date has been the low purity level of the deposition. This has two independent causes: (1) partial or incomplete decomposition of the precursor molecule and (2) contamination from the residual chamber gas. This frequently limits the functionality of the structure, hence it is desirable to improve the decomposition and prevent the inclusion of contaminants. In this contribution we review and compare for the first time all the techniques specifically aimed at purifying the as-deposited impure EBID structures. Despite incomplete and scattered data, we observe some general trends: application of heat (during or after deposition) is usually beneficial to some extent; working in a favorable residual gas (ultra-high vacuum set-ups or plasma cleaning the chamber) is highly recommended; gas mixing approaches are extremely variable and not always reproducible between research groups; and carbon-free precursors are promising but tend to result in oxygen being the contaminant species rather than carbon. Finally we highlight a few novel approaches.

show abstract

“…Many studies have been carried out using scanning electron microscopes (SEM) (Allen et al ., 1988;Bret et al ., 2005;Fischer et al ., 2006;Hoyle et al ., 1996;Kindt et al ., 2004;Kohlmann-von Platen et al ., 1993;Randolph et al ., 2005b;Utke et al ., 2000), transmission electron microscopy (TEM) (Kislov et al ., 1996;Matsui and Ichihashi, 1988;Mitsuishi et al ., 2003), and scanning transmission electron microscopy (STEM) (Silvis-Cividjian et al ., 2002van Dorp et al ., 2005) equipped with gas injection system for various gases and conditions, and has been found to be successful for the deposition of materials such as W (Choi et al ., 2006;Komuro, 1997, 1999;Hoyle et al ., 1993Hoyle et al ., , 1996Ichihashi and Matsui, 1988;Komuro and Hiroshima, 1997;Koops et al ., 1988), Au (Görtz et al ., 1995), Cu (Luisier et al ., 2004) and Pt (Takai et al ., 1998), and also for the etching with XeF 2 (Wang et al ., 2003;Rack et al ., 2003;Randolph et al ., 2005a) precursor gas. In summary, the technique has an enormous potential in many fields of application .…”

Section: Introductionmentioning

confidence: 99%

Effect of Electron Beam‐Induced Deposition and Etching Under Bias

et al. 2007

View full text Add to dashboard Cite

Electron-beam-induced deposition (EBID) and etching (EBIE) provides a simple way to fabricate or etch submicron or nanoscale structures of various materials in a direct-write (i.e.nonlithographic) fashion. The growth rate or the etch rate are influenced by many factors such as beam energy, beam current, temperature of the substrate material, pressure of the chamber, and geometry of the gas injector etc. The mechanism of EBID and EBIE involves the interaction of the incident electron beam or emitted electron from the target material. The role of these electrons is still not completely understood although the contribution of low energy secondary electrons (SE) has been assumed to be the dominant contributor of EBID and EBIE based on its overlap with the dissociation cross section. We have studied the growth and etching phenomenon under various biasing conditions to investigate how low voltage biasing of the substrate affects secondary electron trajectories and subsequently modifies electron-beam-induced deposition and etching.

show abstract

Comparative Study of Cu-Precursors for 3D Focused Electron Beam Induced Deposition

Cited by 20 publications

References 25 publications

Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

Creating pure nanostructures from electron-beam-induced deposition using purification techniques: a technology perspective

Effect of Electron Beam‐Induced Deposition and Etching Under Bias

Contact Info

Product

Resources

About