Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials 2006
DOI: 10.7567/ssdm.2006.e-8-6
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Comparative Study of DC and Microwave Characteristics of 0.12 μm T-Shaped Gate AlGaAs/InGaAs/GaAs PHEMTs Using a Hybrid and Conventional E-beam Lithography Process

Jong−Won Lim1,
Sungpil Yoon2,
Ho−Kyun Ahn3
et al.
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